Inventor · disambiguated record
Yuan-Cheng Yang
Also filed as: Yang yuan-cheng
7 granted patents·4 pending applications·11 citations·filing 2010–2025
76Inventor score
Top patents by PatentIndex Score
11 records- 0189US10985071B1Gate oxide forming processUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 20, 2021·6 cites·14 claims
- 0277US12040397B2Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 0375US8815703B2Fabricating method of shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Aug 26, 2014·4 cites·6 claims
- 0475US2024339533A1Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0573US2025267933A1Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0672US12317584B2Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 0767US11705515B2Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 0862US8034690B2Method of etching oxide layer and nitride layerUNITED MICROELECTRONICS CORP·Filed 2010·Granted Oct 11, 2011·1 cites·9 claims
- 0957US2025194144A1Semiconductor device having contact field plate (cfp) and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1055US11676850B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·19 claims
- 1143US2013043513A1Shallow trench isolation structure and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →