Inventor · disambiguated record
Yu-Chan Yen
Also filed as: YEN YU-CHAN
17 granted patents·2 pending applications·58 citations·filing 2008–2024
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15IND TECH RES INST1NANOTEK INSTRUMENTS INC1TAIWAN SEMICONDUCTOR MFG1UNIV NAT TAIWAN1
Top patents by PatentIndex Score
19 records- 0196US9412656B2Reverse tone self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·23 cites·20 claims
- 0293US12009258B2Self-aligned interconnect with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·2 cites·20 claims
- 0393US9633907B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·10 cites·20 claims
- 0489US10998228B2Self-aligned interconnect with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 4, 2021·8 cites·20 claims
- 0586US9570358B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·3 cites·20 claims
- 0685US10879129B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 0785US9412614B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
- 0878US2024297076A1Self-aligned interconnect with protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0976US10163723B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 1076US9812536B2Reverse tone self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·2 cites·20 claims
- 1176US9741621B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 22, 2017·1 cites·20 claims
- 1268US7807301B2Lithium batteryIND TECH RES INST·Filed 2008·Granted Oct 5, 2010·2 cites·9 claims
- 1366US11127837B2Method of forming MOSFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 1464US10504792B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 1560US11715832B2Electrochemically stable anode active material for lithium-ion batteries and production methodNANOTEK INSTRUMENTS INC·Filed 2019·Granted Aug 1, 2023·0 cites·30 claims
- 1660US9911661B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 6, 2018·0 cites·20 claims
- 1758US9343412B2Method of forming MOSFET structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 17, 2016·0 cites·16 claims
- 1857US10461170B2Method of forming MOSFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 29, 2019·0 cites·20 claims
- 1950US2014141318A1Lithium-ion battery and lithium-ion battery electrode structure with dopantsUNIV NAT TAIWAN·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →