Inventor · disambiguated record
Zhenyu Hu
Also filed as: HU ZHENYU · HU ZHENYU OWEN
57 granted patents·11 pending applications·609 citations·filing 2013–2024
98Inventor score
Files withGLOBALFOUNDRIES INC39GLOBALFOUNDRIES US INC16BOSCH GMBH ROBERT7SHENZHEN HOLATEK CO LTD4GLOBAL FOUNDRIES INC1
Top patents by PatentIndex Score
68 records- 0199US9653583B1Methods of forming diffusion breaks on integrated circuit products comprised of finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 16, 2017·79 cites·25 claims
- 0299US9064932B1Methods of forming gate structures by a gate-cut-last process and the resulting structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 23, 2015·109 cites·24 claims
- 0398US10083874B1Gate cut methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·38 cites·18 claims
- 0498US9455198B1Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·51 cites·20 claims
- 0598US9406676B2Method for forming single diffusion breaks between finFET devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·41 cites·14 claims
- 0698US8846491B1Forming a diffusion break during a RMG processGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·97 cites·20 claims
- 0797US9935104B1Fin-type field effect transistors with single-diffusion breaks and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 3, 2018·16 cites·14 claims
- 0896US9947769B1Multiple-layer spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 17, 2018·14 cites·9 claims
- 0996US9553194B1Method for improved fin profileGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·19 cites·16 claims
- 1095US11705508B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 18, 2023·2 cites·19 claims
- 1195US10326002B1Self-aligned gate contact and cross-coupling contact formationGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·11 cites·11 claims
- 1295US10090382B1Integrated circuit structure including single diffusion break and end isolation region, and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·14 cites·20 claims
- 1394US11888031B2Fin-based lateral bipolar junction transistor and methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 30, 2024·2 cites·16 claims
- 1493US10559656B2Wrap-all-around contact for nanosheet-FET and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 11, 2020·8 cites·9 claims
- 1591US10192746B1STI inner spacer to mitigate SDB loadingGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 29, 2019·12 cites·14 claims
- 1690US11127842B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 21, 2021·4 cites·19 claims
- 1790US10396206B2Gate cut methodGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 27, 2019·7 cites·16 claims
- 1888US10707303B1Method, apparatus, and system for improving scaling of isolation structures for gate, source, and/or drain contactsGLOBALFOUNDRIES INC·Filed 2019·Granted Jul 7, 2020·5 cites·18 claims
- 1987US10083873B1Semiconductor structure with uniform gate heightsGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·5 cites·10 claims
- 2087US9373535B2T-shaped fin isolation region and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 21, 2016·7 cites·19 claims
- 2186US10043713B1Method to reduce FinFET short channel gate heightGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 7, 2018·4 cites·9 claims
- 2286US9608341B2High-current plug-in connection with multi-arm contact lamellaeBOSCH GMBH ROBERT·Filed 2014·Granted Mar 28, 2017·16 cites·11 claims
- 2385US9219002B2Overlay performance for a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·6 cites·14 claims
- 2480US10121788B1Fin-type field effect transistors with single-diffusion breaks and methodGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 6, 2018·2 cites·20 claims
- 2579US12107154B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 2679US10957578B2Single diffusion break device for FDSOIGLOBALFOUNDRIES US INC·Filed 2018·Granted Mar 23, 2021·2 cites·20 claims
- 2778US12159926B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 2878US9293586B2Epitaxial block layer for a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·4 cites·6 claims
- 2977US10825897B2Formation of enhanced faceted raised source/drain EPI material for transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 3, 2020·2 cites·14 claims
- 3077US10777642B2Formation of enhanced faceted raised source/drain epi material for transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 15, 2020·2 cites·18 claims
- 3177US10475890B2Scaled memory structures or other logic devices with middle of the line cutsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 12, 2019·2 cites·14 claims
- 3276US8987083B1Uniform gate height for semiconductor structure with N and P type finsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 24, 2015·4 cites·10 claims
- 3373US10056486B2Methods for fin thinning providing improved SCE and S/D EPI growthGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·2 cites·8 claims
- 3473US9831591B2Catch element of a contact having a nose-shaped projectionBOSCH GMBH ROBERT·Filed 2016·Granted Nov 28, 2017·3 cites·13 claims
- 3571US9362176B2Uniform exposed raised structures for non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·2 cites·4 claims
- 3669US11810969B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 7, 2023·0 cites·19 claims
- 3768USD750691SSmart projectorSHENZHEN HOLATEK CO LTD·Filed 2015·Granted Mar 1, 2016·12 cites·1 claims
- 3867US12205949B1High-voltage semiconductor device structuresGLOBALFOUNDRIES US INC·Filed 2024·Granted Jan 21, 2025·0 cites·20 claims
- 3966US12364000B1Device structures for a high-voltage semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2024·Granted Jul 15, 2025·0 cites·19 claims
- 4064US9859644B2Contact elementBOSCH GMBH ROBERT·Filed 2015·Granted Jan 2, 2018·2 cites·9 claims
- 4161US12495575B2Multi-channel replacement metal gate deviceGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 9, 2025·0 cites·14 claims
- 4259US11908898B2Lateral bipolar transistor structure with base layer of varying horizontal width and methods to form sameGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 4359US11784224B2Lateral bipolar transistor structure with base over semiconductor buffer and related methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4458US12261215B2Fin on silicon-on-insulatorGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 25, 2025·0 cites·17 claims
- 4558US10643900B2Method to reduce FinFET short channel gate heightGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·0 cites·20 claims
- 4656US12272740B2Bipolar junction transistors with a nanosheet intrinsic baseGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 4755US12389627B2Silicon germanium fins and integration methodsGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 12, 2025·0 cites·14 claims
- 4855USD1006095SProjectorSHENZHEN HOLATEK CO LTD·Filed 2021·Granted Nov 28, 2023·2 cites·1 claims
- 4954US10431665B2Multiple-layer spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 1, 2019·0 cites·20 claims
- 5052US10833067B1Metal resistor structure in at least one cavity in dielectric over TS contact and gate structureGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →