Inventor · disambiguated record
Zhongda Li
Also filed as: LI ZHONGDA
9 granted patents·2 pending applications·12 citations·filing 2009–2024
81Inventor score
Top patents by PatentIndex Score
11 records- 0179US10056500B2Vertical JFET made using a reduced mask setUNITED SILICON CARBIDE INC·Filed 2016·Granted Aug 21, 2018·2 cites·11 claims
- 0275US8188514B2TransistorSUGIMOTO MASAHIRO·Filed 2009·Granted May 29, 2012·6 cites·4 claims
- 0373US10367098B2Vertical JFET made using a reduced masked setUNITED SILICON CARBIDE INC·Filed 2018·Granted Jul 30, 2019·1 cites·20 claims
- 0472US10367099B2Trench vertical JFET with ladder terminationUNITED SILICON CARBIDE INC·Filed 2018·Granted Jul 30, 2019·1 cites·20 claims
- 0570US10446695B2Planar multi-implanted JFETUNITED SILICON CARBIDE INC·Filed 2017·Granted Oct 15, 2019·1 cites·10 claims
- 0660US2024421151A1Vertical junction field-effect transistors with source-drain diode cells integrated at die levelQORVO US INC·Filed 2024·Application pending·0 cites
- 0752US10121907B2Planar triple-implanted JFETUNITED SILICON CARBIDE INC·Filed 2016·Granted Nov 6, 2018·0 cites·8 claims
- 0850US10050154B2Trench vertical JFET with ladder terminationUNITED SILICON CARBIDE INC·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 0950US9148139B2Monolithically integrated cascode switchesUNITED SILICONE CARBIDE INC·Filed 2014·Granted Sep 29, 2015·1 cites·16 claims
- 1048US9653618B1Planar triple-implanted JFETUNITED SILICON CARBIDE INC·Filed 2015·Granted May 16, 2017·0 cites·8 claims
- 1148US2017018657A1Vertical jfet made using a reduced mask setUNITED SILICON CARBIDE INC·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Zhongda Li files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →