Inventor · disambiguated record
Zhenyu Lu
Also filed as: LU ZHENYU
140 granted patents·32 pending applications·2,082 citations·filing 2006–2025
99Inventor score
Files withYANGTZE MEMORY TECH CO LTD75NUGGEHALLI JAYASIMHA27MICRON TECHNOLOGY INC21SANDISK TECHNOLOGIES INC13SANDISK TECHNOLOGIES LLC8
Top patents by PatentIndex Score
172 records- 0199US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
- 0299US9673213B1Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jun 6, 2017·77 cites·23 claims
- 0399US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 0498US11785776B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 10, 2023·6 cites·20 claims
- 0598US11133325B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 28, 2021·14 cites·9 claims
- 0698US10553604B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 4, 2020·31 cites·20 claims
- 0798US10403631B1Three-dimensional ferroelectric memory devicesWUXI PETABYTE TECH CO LTD·Filed 2018·Granted Sep 3, 2019·72 cites·30 claims
- 0898US10283452B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 7, 2019·61 cites·13 claims
- 0998US10269620B2Multi-tier memory device with through-stack peripheral contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 23, 2019·34 cites·15 claims
- 1098US10249640B2Within-array through-memory-level via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 2, 2019·52 cites·27 claims
- 1198US10147732B1Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 4, 2018·66 cites·21 claims
- 1298US9853046B2Apparatuses and methods for forming multiple decks of memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 26, 2017·19 cites·11 claims
- 1398US9853043B2Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill materialSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 26, 2017·49 cites·17 claims
- 1498US9842907B2Memory device containing cobalt silicide control gate electrodes and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·27 cites·9 claims
- 1598US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 1698US9543318B1Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistorsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 10, 2017·80 cites·18 claims
- 1798US9530790B1Three-dimensional memory device containing CMOS devices over memory stack structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·159 cites·28 claims
- 1898US9502471B1Multi tier three-dimensional memory devices including vertically shared bit linesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 22, 2016·116 cites·26 claims
- 1998US9449987B1Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistorsSANDISK TECHNOLOGIES INC·Filed 2016·Granted Sep 20, 2016·454 cites·28 claims
- 2097US11758732B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 2197US11527547B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 2297US10923491B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
- 2397US10593690B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 17, 2020·21 cites·20 claims
- 2497US10256248B2Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 9, 2019·42 cites·25 claims
- 2597US9935050B2Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 3, 2018·25 cites·20 claims
- 2696US10115732B2Three dimensional memory device containing discrete silicon nitride charge storage regionsSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 30, 2018·33 cites·17 claims
- 2796US9985046B2Method of forming a staircase in a semiconductor device using a linear alignment control featureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 29, 2018·17 cites·9 claims
- 2896US9779948B1Method of fabricating 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·17 cites·20 claims
- 2996US9780034B1Three-dimensional memory device containing annular etch-stop spacer and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·38 cites·4 claims
- 3096US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 3196US9362300B2Apparatuses and methods for forming multiple decks of memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Jun 7, 2016·21 cites·23 claims
- 3295US10930663B2Interconnect structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 23, 2021·14 cites·12 claims
- 3395US9437604B2Methods and apparatuses having strings of memory cells including a metal sourceMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 6, 2016·21 cites·19 claims
- 3494US11031333B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·8 cites·19 claims
- 3594US10580788B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 3, 2020·14 cites·20 claims
- 3694US9859363B2Self-aligned isolation dielectric structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 2, 2018·15 cites·31 claims
- 3794US9431410B2Methods and apparatuses having memory cells including a monolithic semiconductor channelMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 30, 2016·15 cites·11 claims
- 3893US11956953B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
- 3993US10679721B2Structure and method for testing three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·9 cites·15 claims
- 4092US11211397B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 28, 2021·6 cites·14 claims
- 4192US10910397B2Through array contact structure of three- dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·20 claims
- 4292US10861862B1Ferroelectric memory devicesWUXI PETABYTE TECH CO LTD·Filed 2019·Granted Dec 8, 2020·6 cites·26 claims
- 4392US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
- 4492US10672711B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·19 claims
- 4592US10658378B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 4692US8876661B2Multi-functional motivating exercise equipmentLU ZHENYU·Filed 2010·Granted Nov 4, 2014·34 cites·20 claims
- 4792US8310703B2Printing and scanning with cloud storageNUGGEHALLI JAYASIMHA·Filed 2009·Granted Nov 13, 2012·23 cites·16 claims
- 4891US11276642B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·19 claims
- 4991US10867678B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·8 cites·19 claims
- 5091US10868031B2Multiple-stack three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·6 claims
Showing the top 50 of 172 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →