Inventor · disambiguated record
Zhi Tian
Also filed as: TIAN ZHI · Tian zhi-hai
21 granted patents·9 pending applications·10 citations·filing 2010–2024
89Inventor score
Files withSHANGHAI HUALI MICROELECT CORP15SHANGHAI HUALI INTEGRATED CIRCUIT CORP12HONGFUJIN PREC IND SHENZHEN1INTELLIGENT FUSION TECH INC1STATE GRID HUBEI ELECTRIC POWER RES INSTITUTE1
Top patents by PatentIndex Score
30 records- 0191US12453120B2HV device and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Oct 21, 2025·2 cites·16 claims
- 0286US12396170B2Super flash and method for manufacturing sameSHANGHAI HUALI MICROELECT CORP·Filed 2023·Granted Aug 19, 2025·2 cites·16 claims
- 0382US11322506B2Semiconductor structure of split gate flash memory cell and method for manufacturing the sameSHANGHAI HUALI MICROELECT CORP·Filed 2020·Granted May 3, 2022·1 cites·12 claims
- 0472US8659071B2Method and structure to improve the erasing speed operation of SONOS memory device having a graded silicon nitride layerSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Feb 25, 2014·4 cites·15 claims
- 0569US11676987B2Semiconductor structure and the manufacturing method thereofSHANGHAI HUALI MICROELECT CORP·Filed 2022·Granted Jun 13, 2023·0 cites·14 claims
- 0668US12501648B2HV device and method for manufacturing sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Dec 16, 2025·0 cites·8 claims
- 0767US11854790B2Global shutter CMOS image sensor and method for making the sameSHANGHAI HUALI MICROELECT CORP·Filed 2022·Granted Dec 26, 2023·0 cites·8 claims
- 0867US11723197B2Semiconductor structure of split gate flash memory cellSHANGHAI HUALI MICROELECT CORP·Filed 2021·Granted Aug 8, 2023·0 cites·5 claims
- 0963US11737268B2Stack capacitor, a flash memory device and a manufacturing method thereofSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Aug 22, 2023·0 cites·6 claims
- 1063US2024357791A1Process method for improving sram operating speedSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1162US11695027B2Semiconductor structure and the manufacturing method thereofSHANGHAI HUALI MICROELECT CORP·Filed 2020·Granted Jul 4, 2023·0 cites·12 claims
- 1262US9897634B2Sliding window energy detection for spectrum sensing under low SNR conditionsINTELLIGENT FUSION TECH INC·Filed 2014·Granted Feb 20, 2018·1 cites·20 claims
- 1362US2025151424A1Cis pixel readout structure and method for fabricating the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1461US11437387B2Stack capacitor, a flash memory device and a manufacturing method thereofSHANGHAI HUALI MICROELECT CORP·Filed 2021·Granted Sep 6, 2022·0 cites·5 claims
- 1560US2025133813A1Method and structure for improving esd performance of metal-gate high-voltage devicesSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1659US11735610B2Global shutter CMOS image sensor and method for making the sameSHANGHAI HUALI MICROELECT CORP·Filed 2020·Granted Aug 22, 2023·0 cites·7 claims
- 1758US2024421210A1High-voltage metal gate device and process method for the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1857US2025142819A1Method for manufacturing nor flashSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2024·Application pending·0 cites
- 1954US12446297B2Low voltage triggering silicon controlled rectifierSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2023·Granted Oct 14, 2025·0 cites·15 claims
- 2053US10804302B2Pixel structure and manufacturing method thereforSHANGHAI HUALI MICROELECT CORP·Filed 2018·Granted Oct 13, 2020·0 cites·17 claims
- 2152US11815564B2Method for analyzing correlation between rail transit and direct current (DC) magnetic bias of transformerSTATE GRID HUBEI ELECTRIC POWER RES INSTITUTE·Filed 2021·Granted Nov 14, 2023·0 cites·4 claims
- 2251US11315969B2Buried tri-gate fin vertical gate structure and method for making the sameSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Apr 26, 2022·0 cites·12 claims
- 2349US11282874B2Global shutter CMOS image sensor having photosensitive doped region with inhomogeneous potentialsSHANGHAI HUALI MICROELECT CORP·Filed 2019·Granted Mar 22, 2022·0 cites·15 claims
- 2447US9123619B2Method for inhibiting the electric crosstalk of back illuminated CMOS image sensorSHANGHAI HUALI MICROELECT CORP·Filed 2013·Granted Sep 1, 2015·0 cites·6 claims
- 2546US12484216B2Method for manufacturing a super flash memorySHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2022·Granted Nov 25, 2025·0 cites·12 claims
- 2646US11282968B2Device structure for increasing coupling ratio of body-tied fin structure flash memory cellSHANGHAI HUALI INTEGRATED CIRCUIT CORP·Filed 2020·Granted Mar 22, 2022·0 cites·9 claims
- 2744US2022059598A1Method for Detecting Depth of Vertical Gate of Transfer Transistor of CMOS Image SensorSHANGHAI HUALI MICROELECT CORP·Filed 2020·Application pending·0 cites
- 2839US2011172945A1Method for monitoring burn-in procedure of electronic deviceHONGFUJIN PREC IND SHENZHEN·Filed 2010·Application pending·0 cites
- 2938US2013181279A1Sonos structure and manufacturing method thereofSHANGHAI HUALI MICROELECT CORP·Filed 2012·Application pending·0 cites
- 3031US2014124849A1B4-flash device and the manufacturing method therofSHANGHAI HUALI MICROELECT CORP·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →