Inventor · disambiguated record
Zhongze Wang
Also filed as: WANG ZHONGZE
127 granted patents·39 pending applications·1,238 citations·filing 1998–2024
99Inventor score
Top patents by PatentIndex Score
166 records- 0197US6808994B1Transistor structures and processes for forming sameMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 26, 2004·142 cites·20 claims
- 0296US6503805B2Channel implant through gate polysiliconMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·125 cites·18 claims
- 0395US9524972B2Metal layers for a three-port bit cellQUALCOMM INC·Filed 2015·Granted Dec 20, 2016·10 cites·8 claims
- 0495US6599789B1Method of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 29, 2003·67 cites·21 claims
- 0594US9576801B2High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memoryQUALCOMM INC·Filed 2014·Granted Feb 21, 2017·17 cites·24 claims
- 0694US6812103B2Methods of fabricating a dielectric plug in MOSFETS to suppress short-channel effectsMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 2, 2004·68 cites·57 claims
- 0792US10964380B1Integrated device comprising memory bitcells comprising shared preload line and shared activation lineQUALCOMM INC·Filed 2020·Granted Mar 30, 2021·3 cites·26 claims
- 0891US11551759B2Voltage offset for compute-in-memory architectureQUALCOMM INC·Filed 2020·Granted Jan 10, 2023·3 cites·15 claims
- 0991US9379058B2Grounding dummy gate in scaled layout designQUALCOMM INC·Filed 2014·Granted Jun 28, 2016·13 cites·15 claims
- 1091US6716687B2FET having epitaxial silicon growthMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·58 cites·32 claims
- 1191US6093661AIntegrated circuitry and semiconductor processing method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 25, 2000·74 cites·1 claims
- 1290US9786356B2Memory device with adaptive voltage scaling based on error informationQUALCOMM INC·Filed 2015·Granted Oct 10, 2017·12 cites·30 claims
- 1388US9691868B2Merging lithography processes for gate patterningQUALCOMM INC·Filed 2014·Granted Jun 27, 2017·9 cites·11 claims
- 1488US9536596B2Three-port bit cell having increased widthQUALCOMM INC·Filed 2014·Granted Jan 3, 2017·8 cites·20 claims
- 1588US9336863B2Dual write wordline memory cellQUALCOMM INC·Filed 2014·Granted May 10, 2016·11 cites·30 claims
- 1688US7154146B2Dielectric plug in mosfets to suppress short-channel effectsMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 26, 2006·12 cites·31 claims
- 1787US10777259B1Static random-access memory (SRAM) for in-memory computingQUALCOMM INC·Filed 2019·Granted Sep 15, 2020·6 cites·17 claims
- 1886US9111635B2Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methodsQUALCOMM INC·Filed 2013·Granted Aug 18, 2015·8 cites·19 claims
- 1986US6864155B2Methods of forming silicon-on-insulator comprising integrated circuitry, and wafer bonding methods of forming silicon-on-insulator comprising integrated circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 8, 2005·28 cites·29 claims
- 2086US6541395B1Semiconductor processing method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 1, 2003·31 cites·12 claims
- 2185US11562205B2Parallel processing of a convolutional layer of a neural network with compute-in-memory arrayQUALCOMM INC·Filed 2019·Granted Jan 24, 2023·5 cites·20 claims
- 2284US9941154B2Reverse self aligned double patterning process for back end of line fabrication of a semiconductor deviceQUALCOMM INC·Filed 2016·Granted Apr 10, 2018·3 cites·15 claims
- 2383US12340304B2Partial sum management and reconfigurable systolic flow architectures for in-memory computationQUALCOMM INC·Filed 2021·Granted Jun 24, 2025·1 cites·13 claims
- 2483US11790241B2Systems and methods for modifying neural networks for binary processing applicationsQUALCOMM INC·Filed 2020·Granted Oct 17, 2023·2 cites·23 claims
- 2583US9508439B2Non-volatile multiple time programmable memory deviceQUALCOMM INC·Filed 2015·Granted Nov 29, 2016·4 cites·28 claims
- 2683US6723597B2Method of using high-k dielectric materials to reduce soft errors in SRAM memory cells, and a device comprising sameMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 20, 2004·24 cites·45 claims
- 2782US10964356B2Compute-in-memory bit cellQUALCOMM INC·Filed 2019·Granted Mar 30, 2021·4 cites·30 claims
- 2881US6277674B1Semiconductor fuses, methods of using the same, methods of making the same, and semiconductor devices containing the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 21, 2001·39 cites·48 claims
- 2980US10290352B2System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regionsQUALCOMM INC·Filed 2015·Granted May 14, 2019·3 cites·23 claims
- 3080US9502424B2Integrated circuit device featuring an antifuse and method of making sameQUALCOMM INC·Filed 2012·Granted Nov 22, 2016·5 cites·43 claims
- 3180US8799847B1Methods for designing fin-based field effect transistors (FinFETS)QUALCOMM INC·Filed 2013·Granted Aug 5, 2014·5 cites·19 claims
- 3280US8279693B2Programmable tracking circuit for tracking semiconductor memory read currentWANG ZHONGZE·Filed 2010·Granted Oct 2, 2012·8 cites·24 claims
- 3378US9875788B2Low-power 5T SRAM with improved stability and reduced bitcell sizeJUNG SEONG-OOK·Filed 2010·Granted Jan 23, 2018·8 cites·26 claims
- 3478US9455026B2Shared global read and write word linesQUALCOMM INC·Filed 2014·Granted Sep 27, 2016·4 cites·30 claims
- 3578US7968954B2Intermediate semiconductor device having nitrogen concentration profileMICRON TECHNOLOGY INC·Filed 2007·Granted Jun 28, 2011·5 cites·8 claims
- 3678US6812529B2Suppression of cross diffusion and gate depletionMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 2, 2004·19 cites·38 claims
- 3777US2025124284A1Partial sum management and reconfigurable systolic flow architectures for in-memory computationQUALCOMM INC·Filed 2024·Application pending·0 cites
- 3875US11500960B2Memory cell for dot product operation in compute-in-memory chipQUALCOMM INC·Filed 2019·Granted Nov 15, 2022·2 cites·14 claims
- 3975US6949479B2Methods of forming transistor devicesMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 27, 2005·21 cites·15 claims
- 4075US6744102B2MOS transistors with nitrogen in the gate oxide of the p-channel transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 1, 2004·14 cites·20 claims
- 4174US10141317B2Metal layers for a three-port bit cellQUALCOMM INC·Filed 2016·Granted Nov 27, 2018·1 cites·17 claims
- 4274US9806083B2Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methodsQUALCOMM INC·Filed 2014·Granted Oct 31, 2017·3 cites·28 claims
- 4374US9564361B2Reverse self aligned double patterning process for back end of line fabrication of a semiconductor deviceQUALCOMM INC·Filed 2013·Granted Feb 7, 2017·2 cites·33 claims
- 4474US9336864B2Silicon germanium read port for a static random access memory register fileQUALCOMM INC·Filed 2014·Granted May 10, 2016·3 cites·27 claims
- 4574US6984570B2Wafer bonding method of forming silicon-on-insulator comprising integrated circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 10, 2006·12 cites·14 claims
- 4674US6977419B2MOSFETs including a dielectric plug to suppress short-channel effectsMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 20, 2005·14 cites·15 claims
- 4774US6767778B2Low dose super deep source/drain implantMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 27, 2004·17 cites·18 claims
- 4874US6555455B1Methods of passivating an oxide surface subjected to a conductive material annealMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 29, 2003·25 cites·19 claims
- 4972US7314812B2Method for reducing the effective thickness of gate oxides by nitrogen implantation and annealMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 1, 2008·12 cites·19 claims
- 5072US7095083B2Methods for making semiconductor structures having high-speed areas and high-density areasMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 22, 2006·4 cites·5 claims
Showing the top 50 of 166 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →