Inventor · disambiguated record
Zhen-Cheng Wu
Also filed as: WU ZHEN · WU ZHEN-CHENG
52 granted patents·51 pending applications·420 citations·filing 2002–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD41TAIWAN SEMICONDUCTOR MFG20UNITED MICROELECTRONICS CORP17HU YEN-CHENG6WU ZHEN-CHENG5
Top patents by PatentIndex Score
103 records- 0197US8999839B2Semiconductor structure having an air-gap region and a method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·187 cites·20 claims
- 0294US10361152B2Semiconductor structure having an air-gap region and a method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 23, 2019·11 cites·20 claims
- 0391US8456009B2Semiconductor structure having an air-gap region and a method of manufacturing the sameSU SHU-HUI·Filed 2010·Granted Jun 4, 2013·19 cites·20 claims
- 0490US11476348B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 18, 2022·2 cites·16 claims
- 0589US12477775B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·1 cites·20 claims
- 0689US10332981B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 25, 2019·5 cites·7 claims
- 0788US2025015158A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0885US7115974B2Silicon oxycarbide and silicon carbonitride based materials for MOS devicesTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2004·Granted Oct 3, 2006·34 cites·19 claims
- 0984US12237394B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Feb 25, 2025·0 cites·7 claims
- 1084US12125890B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 22, 2024·0 cites·6 claims
- 1184US8334163B1Method of forming solar cellHU YEN-CHENG·Filed 2012·Granted Dec 18, 2012·8 cites·13 claims
- 1283US8975749B2Method of making a semiconductor device including barrier layers for copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 10, 2015·5 cites·20 claims
- 1382US7160800B2Decreasing metal-silicide oxidation during wafer queue timeTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 9, 2007·8 cites·20 claims
- 1481US9899491B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 20, 2018·3 cites·5 claims
- 1581US9685383B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 20, 2017·4 cites·16 claims
- 1680US10446667B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 15, 2019·2 cites·11 claims
- 1780US7217648B2Post-ESL porogen burn-out for copper ELK integrationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 15, 2007·23 cites·19 claims
- 1880US2025359113A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1980US2025351522A1Under epitaxy isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2079US11757016B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Sep 12, 2023·0 cites·13 claims
- 2179US8653664B2Barrier layers for copper interconnectLIU NAI-WEI·Filed 2010·Granted Feb 18, 2014·6 cites·20 claims
- 2279US2025349718A1Semiconductor Devices Including Backside Power Via and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2378US9178086B2Method for fabricating back-contact type solar cellAU OPTRONICS CORP·Filed 2014·Granted Nov 3, 2015·2 cites·32 claims
- 2478US2025338554A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2578US2025359178A1Profile control of isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2678US2025331288A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2778US2025159964A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2878US2025359205A1Isolation Structure For TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2977US2025338533A1Isolation structures in transistor devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3077US2025329634A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3177US2025351480A1Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3276US10026827B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 17, 2018·2 cites·14 claims
- 3376US7193325B2Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnectsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 20, 2007·19 cites·13 claims
- 3476US2025366045A1Stacked multi-gate device with an insulating layer between top and bottom source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3576US2025336714A1Isolation regions for isolating transistors and the methods forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3675US2024297038A1Dielectric layer, interconnection structure using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3775US2025318217A1Transistor gate isolation structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3874US12512408B2Semiconductor devices including backside power via and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 3973US11322598B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted May 3, 2022·0 cites·7 claims
- 4073US2025220946A1Isolation structures in transistor devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4172US7247571B2Method for planarizing semiconductor structuresTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 24, 2007·4 cites·21 claims
- 4271US12426348B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4370US12494376B2Control method of multi-stage etching process and processing device using the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 9, 2025·0 cites·9 claims
- 4470US12014919B2Dielectric layer, interconnection structure using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·0 cites·20 claims
- 4570US7485949B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 3, 2009·4 cites·17 claims
- 4669US12439624B2Method of manufacturing semiconductor devices including forming an air gap based on removing a recessed sacrificial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 4769US7196423B2Interconnect structure with dielectric barrier and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 27, 2007·17 cites·24 claims
- 4867US8835753B2Solar cell and method of fabricating the sameHU YEN-CHENG·Filed 2011·Granted Sep 16, 2014·1 cites·17 claims
- 4967US2024120236A1Isolation Regions For Isolating Transistors and the Methods Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5066US12374616B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →