Inventor · name-matched record
CHENG KANGGUO
17 granted patents·1 pending application·0 citations·filing 2020–2025
86Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
18 records- 0196US2026013208A1Selective removal of semiconductor finsADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2025·Application pending·0 cites
- 0289US12550359B2Forming a sacrificial liner for dual channel devicesADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 0387US12520567B2Hybrid-channel nano-sheet FETsADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Jan 6, 2026·0 cites·20 claims
- 0484US12532682B2Method of manufacturing a structure by asymmetrical ion bombardment of a capped underlying layerADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Jan 20, 2026·0 cites·22 claims
- 0577US12527007B2Phase change memory with improved recovery from element segregationIBM·Filed 2022·Granted Jan 13, 2026·0 cites·19 claims
- 0668US12557356B2Semiconductor structure with fully wrapped-around backside contactIBM·Filed 2022·Granted Feb 17, 2026·0 cites·20 claims
- 0767US12581719B2Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistorsIBM·Filed 2020·Granted Mar 17, 2026·0 cites·20 claims
- 0864US12557564B2Memory cell with a variable element and a phase change memoryIBM·Filed 2022·Granted Feb 17, 2026·0 cites·18 claims
- 0963US12593457B2Multi-state ferroelectric-RAM with stacked capacitorsIBM·Filed 2022·Granted Mar 31, 2026·0 cites·16 claims
- 1062US12550421B2VTFET with reduced parasitic capacitanceIBM·Filed 2022·Granted Feb 10, 2026·0 cites·16 claims
- 1162US12550427B2Vertical inverter formation on stacked field effect transistor (SFET)IBM·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1262US12538565B2Self-aligned bottom spacerIBM·Filed 2022·Granted Jan 27, 2026·0 cites·13 claims
- 1360US12562225B2Hybrid memory for neuromorphic applicationsIBM·Filed 2021·Granted Feb 24, 2026·0 cites·10 claims
- 1460US12550629B2Self-aligned, symmetric phase change memory elementIBM·Filed 2021·Granted Feb 10, 2026·0 cites·20 claims
- 1559US12568683B2Single stack dual channel gate-all-around nanosheet with strained PFET and bottom dielectric isolation NFETIBM·Filed 2022·Granted Mar 3, 2026·0 cites·17 claims
- 1656US12575160B2Backside and frontside contacts for semiconductor deviceIBM·Filed 2022·Granted Mar 10, 2026·0 cites·20 claims
- 1755US12557565B2Phase change memory with reduced programming currentIBM·Filed 2022·Granted Feb 17, 2026·0 cites·18 claims
- 1854US12550338B2Three dimensional cross-point non-volatile memoryIBM·Filed 2022·Granted Feb 10, 2026·0 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when CHENG KANGGUO files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: exact name match across USPTO filings. How scoring works →