Inventor · name-matched record
COLOMBEAU BENJAMIN
3 granted patents·9 pending applications·0 citations·filing 2022–2025
41Inventor score
Files withAPPLIED MATERIALS INC12
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
12 records- 0190US2026047152A1Integrated CMOS Source Drain Formation With Advanced ControlAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0284US2026089995A1Gate-all-around transistors and methods of formingAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0368US12538509B2Gate-all-around transistors and methods of formingAPPLIED MATERIALS INC·Filed 2022·Granted Jan 27, 2026·0 cites·14 claims
- 0464US2026052754A1Transistor bilayer dielectric wallAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0562US2026047121A1Transistor direct backside contact with etch stop layerAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0661US2026096200A1Method and material system for multi-threshold-voltage gates in semiconductor structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0761US2026006888A1Selective process for simultaneous pfet epi hardmask and nfet partial bottom dielectric isolation layer formationAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0860US2026011558A1Gap fill methods in high aspect ratio featuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0957US2026020273A1Isolation module for backside power delivery in devices without inner spacersAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1056US12588248B2Template for nanosheet source drain formation with bottom dielectricAPPLIED MATERIALS INC·Filed 2022·Granted Mar 24, 2026·0 cites·16 claims
- 1156US2026013166A1Backside power delivery in devices without inner spacersAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1255US12557636B2Gate all around backside power rail formation with backside dielectric isolation schemeAPPLIED MATERIALS INC·Filed 2023·Granted Feb 17, 2026·0 cites·13 claims
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Identity basis: exact name match across USPTO filings. How scoring works →