Inventor · name-matched record
LIN YU-MING
15 granted patents·6 pending applications·0 citations·filing 2020–2025
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17JABIL CIRCUIT SINGAPORE PTE LTD2ACER INC1UNITED MICROELECTRONICS CORP1
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
21 records- 0197US2026082580A1Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0297US2026089964A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0389US2026013079A1Heat dissipation systemACER INC·Filed 2025·Application pending·0 cites
- 0487US12563736B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 24, 2026·0 cites·20 claims
- 0584US12557293B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 17, 2026·0 cites·20 claims
- 0682US12568670B2Self-aligned contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 3, 2026·0 cites·20 claims
- 0782US12532522B2Methods of forming source/drain contacts in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 20, 2026·0 cites·20 claims
- 0880US12568656B2Thin film transistor including a dielectric diffusion barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 3, 2026·0 cites·20 claims
- 0979US12575107B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 10, 2026·0 cites·20 claims
- 1076US12550383B2Double gate ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 10, 2026·0 cites·20 claims
- 1172US12586619B2Integrated circuit device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 24, 2026·0 cites·20 claims
- 1272US12550701B2Formation method of semiconductor device with stacked conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 10, 2026·0 cites·20 claims
- 1365US2026075831A1Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1464US2026096102A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1561US12575109B2Antiferroelectric non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 10, 2026·0 cites·20 claims
- 1660US2026089965A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1759US12532424B2Locking mechanism for removably locking an expansion electrical component to a main electrical component of an electronic device and the electronic deviceJABIL CIRCUIT SINGAPORE PTE LTD·Filed 2024·Granted Jan 20, 2026·0 cites·19 claims
- 1858US12563778B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 24, 2026·0 cites·20 claims
- 1956US12527049B2Transistor with fin structure and nanosheet and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jan 13, 2026·0 cites·16 claims
- 2055US12525486B2Isolation structure for metal interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 13, 2026·0 cites·20 claims
- 2147US12538446B2Card connecting assembly and an electronic card mounting structure thereofJABIL CIRCUIT SINGAPORE PTE LTD·Filed 2024·Granted Jan 27, 2026·0 cites·6 claims
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Identity basis: exact name match across USPTO filings. How scoring works →