Inventor · name-matched record
NALLAPATI GIRIDHAR
0 granted patents·16 pending applications·0 citations·filing 2024–2025
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
16 records- 0170US2026066034A1Repair structure for extreme-bandwidth three-dimensional (3d) stacked dynamic random-access memory (dram) including base die for near-memory computingQUALCOMM INC·Filed 2025·Application pending·0 cites
- 0269US2026068182A1Through silicon via (tsv) bus compression-redistribution die for high-bandwidth three-dimensional dynamic random-access memory (3d dram) for flexible processing unit (pu) placement, improved thermal, and known good die (kgd) dram placement for high-yieldQUALCOMM INC·Filed 2025·Application pending·0 cites
- 0368US2026040923A1Three-dimensional stack with backside power distribution network (bspdn) contactsQUALCOMM INC·Filed 2025·Application pending·0 cites
- 0467US2026060041A1Dynamic random-access memory (dram) test pad arrangement method for a dram cell repair test on three-dimensional (3d) stacked dramQUALCOMM INC·Filed 2025·Application pending·0 cites
- 0567US2026068181A1Three-dimensional dynamic random-access memory (3d dram) structure with vertical separation of a memory cell arrayQUALCOMM INC·Filed 2025·Application pending·0 cites
- 0664US2026068623A1Memory device comprising multiple chips coupled together through fusion bondingQUALCOMM INC·Filed 2025·Application pending·0 cites
- 0764US2026068183A1High-capacity and high-bandwidth three-dimensional dynamic random-access memory (3d dram) integration in standard dram system-in-package (sip)QUALCOMM INC·Filed 2025·Application pending·0 cites
- 0864US2026101734A1Fully self-aligned via (fsav) on subtractive metalQUALCOMM INCORPORATED·Filed 2024·Application pending·0 cites
- 0964US2026068184A1Memory device comprising multiple chips with capacitor in processor in memory portionQUALCOMM INC·Filed 2025·Application pending·0 cites
- 1064US2026082901A1Metallization airgap for subtractive metal processQUALCOMM INC·Filed 2024·Application pending·0 cites
- 1164US2026068767A1Flexible processing unit placement on stacked three-dimensional dynamic random-access memory (3d dram) for near-memory computingQUALCOMM INC·Filed 2025·Application pending·0 cites
- 1264US2026068624A1Memory device comprising multiple chips coupled together through hybrid bonding and fusion bondingQUALCOMM INC·Filed 2025·Application pending·0 cites
- 1364US2026060043A1Wafer and/or chip comprising memory cell structure and method for wafer quality assessmentQUALCOMM INC·Filed 2025·Application pending·0 cites
- 1463US2026082669A1Integrated circuits that include germanide layer(s) in backside contacts to transistor devices formed in the integrated circuit (ic)QUALCOMM INC·Filed 2024·Application pending·0 cites
- 1562US2026057926A1Flexible refresh period control for dynamic random-access memory (dram) dies on a system-on-chip (soc) base die based on monitored temperature sensors of the dram diesQUALCOMM INC·Filed 2025·Application pending·0 cites
- 1662US2026082629A1High-temperature silicide contact for backside source/drain contactsQUALCOMM INC·Filed 2024·Application pending·0 cites
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Identity basis: exact name match across USPTO filings. How scoring works →