Inventor · name-matched record
YANG XIANG
13 granted patents·10 pending applications·0 citations·filing 2022–2024
80Inventor score
This identity is grouped by exact name match (no disambiguated inventor record was available for these filings) — it may combine same-named inventors.
Top patents by PatentIndex Score
23 records- 0168US2026082558A1Non-volatile memory with variable on pitchSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 0265US12530142B2Temperature compensation for pre-charge spike in multi-pass programmingSANDISK TECHNOLOGIES INC·Filed 2023·Granted Jan 20, 2026·0 cites·20 claims
- 0365US12524177B2Automatic bit line voltage and bit line voltage temperature compensation adjustment for non-volatile memory apparatus current consumption reductionSANDISK TECHNOLOGIES INC·Filed 2023·Granted Jan 13, 2026·0 cites·20 claims
- 0464US12567471B2Regular transistor threshold voltage refresh for semi-circle drain side select gatesSANDISK TECHNOLOGIES INC·Filed 2023·Granted Mar 3, 2026·0 cites·20 claims
- 0564US2026088101A1Non-volatile memory with non-discharging readSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 0662US12596495B2Power saving during open block read with large block opennessWESTERN DIGITAL TECH INC·Filed 2023·Granted Apr 7, 2026·0 cites·17 claims
- 0756US12525300B2Energy efficient fast read in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2023·Granted Jan 13, 2026·0 cites·16 claims
- 0855US2026088102A1Reduced current sensing techniquesSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 0954US12548626B2Positive sensing in low power operation mode in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2023·Granted Feb 10, 2026·0 cites·17 claims
- 1054US12531131B2Non-volatile memory with multiple data resolutionsWESTERN DIGITAL TECH INC·Filed 2023·Granted Jan 20, 2026·0 cites·19 claims
- 1154US12518810B2Word line dependent word line switch design and programming techniquesSANDISK TECHNOLOGIES INC·Filed 2023·Granted Jan 6, 2026·0 cites·18 claims
- 1254US2026080966A1In-place erase techniques for nonvolatile memory devicesSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1354US2026031165A1Programming non-volatile memory with narrow threshold voltage distributionsSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1454US2026088103A1Threshold voltage tracking techniques for memory devicesSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1553US12542185B2Read power savings by temporarily disabling bitline voltageSANDISK TECHNOLOGIES INC·Filed 2023·Granted Feb 3, 2026·0 cites·17 claims
- 1652US12573456B2Word line zone based unselect word line bias to enable single-side gate-induced drain leakage eraseSANDISK TECHNOLOGIES INC·Filed 2023·Granted Mar 10, 2026·0 cites·11 claims
- 1752US2026024584A1Hole pre-charge from bitline side to enable full reverse order program sub-block modeSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1852US2026044443A1Pre-charge at read recovery clock from bit line side for sub-block one performance improvementSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1951US2026080949A1Technique to detect an unselected sub-block status in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 2050US12537065B2Reducing time-tag read errors with respect to non-volatile memory structuresWESTERN DIGITAL TECH INC·Filed 2023·Granted Jan 27, 2026·0 cites·17 claims
- 2150US2026073992A1Enable open sub-block erase in sub-block mode operationSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 2249US12586646B2Precharge scheme during programming of a memory deviceSANDISK TECHNOLOGIES INC·Filed 2022·Granted Mar 24, 2026·0 cites·18 claims
- 2347US12597473B2Multi-step read pass voltage discharge for ICC reductionSANDISK TECH INC·Filed 2023·Granted Apr 7, 2026·0 cites·19 claims
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Identity basis: exact name match across USPTO filings. How scoring works →