Method for manufacturing filling planarization film and method for manufacturing electronic device

Abstract

A method for manufacturing a filling planarization film, the method including: a first coating step of applying a first coating liquid, containing a polyamine and a first solvent, to a region including a recessed part of a member having the recessed part, to fill the first coating liquid into the recessed part; and a second coating step of applying a second coating liquid, containing an organic substance having two or more carboxyl groups and a second solvent having a boiling point of 200° C. or less and an SP value of 30 (MPa)1/2 or less, to the region including the recessed part of the member into which the first coating liquid has been filled.

The invention claimed is: 
     
       1. A method for manufacturing a filling planarization film, the method comprising:
 a first coating step of applying a first coating liquid, containing a polyamine and a first solvent, to a region including a recessed part of a member having the recessed part, to fill the first coating liquid into the recessed part; and 
 a second coating step of applying a second coating liquid, containing an organic substance having two or more carboxyl groups and a second solvent having a boiling point of 200° C. or less and an SP value of 30 (MPa) 1/2  or less, to the region including the recessed part of the member into which the first coating liquid has been filled, to form a filling planarization film that planarizes the region including the recessed part of the member. 
 
     
     
       2. The method for manufacturing a filling planarization film according to  claim 1 , wherein the organic substance having two or more carboxyl groups is a divalent or higher-valent carboxylic acid. 
     
     
       3. The method for manufacturing a filling planarization film according to  claim 1 , wherein a content of the polyamine in the first coating liquid is from 1.0% by mass to 20% by mass. 
     
     
       4. The method for manufacturing a filling planarization film according to  claim 1 , wherein the first solvent has a boiling point of 200° C. or less and is hydrophilic. 
     
     
       5. The method for manufacturing a filling planarization film according to  claim 1 , wherein the filling planarization film has an amide bond. 
     
     
       6. The method for manufacturing a filling planarization film according to  claim 1 , wherein the recessed part has a width of 250 nm or less, and has a ratio of depth to width [depth/width] of 0.3 or more. 
     
     
       7. The method for manufacturing a filling planarization film according to  claim 1 , wherein a content of a metal element in the filling planarization film per unit area is 5×10 10  atoms/cm 2  or less per one kind of the metal element. 
     
     
       8. A method for manufacturing an electronic device, the method comprising forming a filling planarization film on a region including a recessed part of a semiconductor substrate or of a circuit substrate having the recessed part by the method according to  claim 1 . 
     
     
       9. The method for manufacturing an electronic device according to  claim 8 , further comprising a step of removing the filling planarization film.