Method for manufacturing an opening structure and opening structure

Abstract

A method for manufacturing an opening structure is provided. The method may include: forming a patterned mask over a first side of a carrier; forming material over the first side of the carrier covering at least a portion of the carrier; forming a first opening in the carrier from a second side of the carrier opposite the first side of the carrier to at least partially expose a surface of the patterned mask; and forming a second opening in the material from the second side of the carrier using the patterned mask as a mask.

What is claimed is: 
     
       1. A method for manufacturing an opening structure, the method comprising:
 forming a patterned mask over a first side of a carrier, wherein the patterned mask comprises at least one opening through the patterned mask; 
 forming material over the first side of the carrier covering at least a portion of the carrier, wherein the material fills the at least one patterned mask opening and directly contacts the carrier at the first side through the at least one patterned mask opening; 
 forming a first opening in the carrier from a second side of the carrier opposite the first side of the carrier to at least partially expose a surface of the patterned mask, the first opening comprising a first sidewall extending at a constant angle, with respect to the surface of the patterned mask, from the first side of the carrier to a second side of the carrier opposite the first side; and 
 forming a second opening in the material from the second side of the carrier using the patterned mask as a mask; 
 wherein the first opening is formed into the carrier so that at least a portion of a first mask portion of the patterned mask facing the carrier and at least a portion of a second mask portion of the patterned mask facing the carrier are exposed by the first opening through the carrier in a direction perpendicular to the surface of the patterned mask. 
 
     
     
       2. A method for manufacturing an opening structure, the method comprising:
 forming a patterned mask over a first side of a carrier, wherein the patterned mask comprises at least one opening through the patterned mask: 
 forming material over the first side of the carrier covering at least a portion of the carrier, wherein the material fills the at least one patterned mask opening and directly contacts the carrier at the first side through the at least one patterned mask opening; 
 forming a first opening in the carrier from a second side of the carrier opposite the first side of the carrier to at least partially expose a surface of the patterned mask; and 
 forming a second opening in the material from the second side of the carrier using the patterned mask as a mask; 
 wherein the first opening has a lateral width of the opening that increases continuously from the second side of the carrier to the first side of the carrier, the lateral width being measured in a direction parallel to the first side of the carrier. 
 
     
     
       3. The method of  claim 1 , wherein after forming the second opening in the material, the material covers and is directly on one or more sidewalls of the patterned mask. 
     
     
       4. The method of  claim 1 , wherein forming material over the first side of the carrier comprises forming material over the first side of the carrier covering at least a portion of the carrier and at least a portion of the patterned mask. 
     
     
       5. The method of  claim 1 , wherein the material is configured to have similar removal characteristics as the material of the carrier. 
     
     
       6. The method of  claim 1 , wherein the patterned mask is a patterned hard mask. 
     
     
       7. The method of  claim 1 , wherein the material of the carrier and the material comprise the same material. 
     
     
       8. The method of  claim 1 , wherein the material of the carrier comprises silicon. 
     
     
       9. The method of  claim 1 , wherein the material comprises silicon. 
     
     
       10. The method of  claim 9 , wherein the material comprises polysilicon. 
     
     
       11. The method of  claim 1 , wherein at least one of the first opening and the second opening is formed by means of an etching process. 
     
     
       12. The method of  claim 11 , wherein at least one of the first opening and the second opening is formed by means of a plasma etching process. 
     
     
       13. The method of  claim 11 , wherein at least one of the first opening and the second opening is formed by means of a wet etching process. 
     
     
       14. The method of  claim 1 , wherein the first opening is formed to have a larger width than the second opening. 
     
     
       15. The method of  claim 1 , further comprising:
 forming a front side structure over a first side of the material facing away from the carrier. 
 
     
     
       16. The method of  claim 15 , wherein forming the front side structure comprises forming at least one of a group comprising a mechanical component and an electronic component over the first side of the material. 
     
     
       17. The method of  claim 16 , further comprising:
 forming a microphone comprising at least one of the group comprising the mechanical component and the electronic component. 
 
     
     
       18. The method of  claim 1 , wherein at least one of the first opening and the second opening is a trench. 
     
     
       19. The method of  claim 15 , wherein a sidewall of the second opening extends from the first side of the carrier to the front side structure. 
     
     
       20. The method of  claim 1 , wherein a virtual plane, coinciding with the first sidewall of the first opening and extending beyond the first sidewall towards the patterned mask, intersects the patterned mask. 
     
     
       21. The method of  claim 1 , wherein the first opening is formed by a first etching process and the second opening is formed by a second etching process, wherein the first etching process is different than and separate from the second etching process.