Resist composition and method of forming resist pattern

Abstract

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1), a constitutional unit (a02) represented by Formula (a0-2), and a constitutional unit (a03) which is represented by Formula (a0-3) and has a structure different from the constitutional unit (a02).

What is claimed is: 
     
       1. A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition comprising:
 a base material component (A) whose solubility in a developer is changed by an action of an acid, 
 wherein the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1), a constitutional unit (a02) represented by Formula (a0-2), and a constitutional unit (a03) which is represented by Formula (a0-3) and has a structure different from the constitutional unit (a02), 
 
       
         
           
           
               
               
           
         
         wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ya 011  represents a divalent linking group, Ra 011  represents a cyclic aliphatic hydrocarbon group which may have a substituent, Ya 012  represents a single bond or a divalent linking group, n a011  represents an integer of 1 to 3, and in a case where n a011  represents 2 or greater, a plurality of Ya 012 's may be the same as or different from each other; and 
       
       
         
           
           
               
               
           
         
         wherein a plurality of R's each independently represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Va 021  and Va 031  each independently represents a divalent hydrocarbon group which may have an ether bond, La 021  and La 031  each independently represents, —COO—, —CON(R′)—, —OCO—, —CONHCO—, or —CONHCS—, R′ represents a hydrogen atom or a methyl group, Ra 021  and Ra 031  each independently represents a lactone-containing cyclic group, a carbonate-containing cyclic group, or a —SO 2 -containing cyclic group, n a021  and n a031  each independently represents 1 or 2, in a case where n a021  represents 2, a plurality of Va 021 's may be the same as or different from each other and a plurality of La 021 's may be the same as or different from each other, and in a case where n a031  represents 2, a plurality of Va 031 's may be the same as or different from each other and a plurality of La 031 's may be the same as or different from each other. 
       
     
     
       2. The resist composition according to  claim 1 , wherein Ra 021  in Formula (a0-2) represents a —SO 2 -containing cyclic group. 
     
     
       3. The resist composition according to  claim 1 , wherein the polymer compound (A1) further has a constitutional unit (a1) containing an acid-decomposable group that has a polarity to be increased by an action of an acid. 
     
     
       4. The resist composition according to  claim 3 , wherein the constitutional unit (a1) is a constitutional unit represented by Formula (a1-1-1): 
       
         
           
           
               
               
           
         
         wherein R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Va 11  represents a divalent hydrocarbon group which may have an ether bond, Ra 11  to Ra 13  each independently represents a linear or branched alkyl group having 1 to 5 carbon atoms which may have a substituent, n a11  represents an integer of 0 to 2, and in a case where n a11  represents 2, a plurality of Va 11 's may be the same as or different from each other. 
       
     
     
       5. The resist composition according to  claim 1 , wherein Ra 011  in Formula (a0-1) represents a bridged alicyclic group which may have a substituent. 
     
     
       6. A method of forming a resist pattern, comprising:
 forming a resist film on a support using the resist composition according to  claim 1 ; 
 exposing the resist film; and 
 patterning the exposed resist film by performing negative type development using a developer that contains an organic solvent to form a resist pattern.