Method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid

Abstract

A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least:producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component;treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode;producing of the metal optical separation grid on at least one support;fastening of the metal optical separation grid against said face of the first metal electrode by brazing;removing the support.

The invention claimed is: 
     
       1. A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least:
 producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; 
 treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; 
 producing of the metal optical separation grid on at least one support; 
 fastening of the metal optical separation grid against said face of the first metal electrode by brazing; 
 removing the support. 
 
     
     
       2. The method according to  claim 1 , wherein the photo-emitting and/or photo-receiving component includes at least one photo-emitting and/or photo-receiving diode comprising at least:
 first and second portions of doped semiconductors that are part of the semiconductor stack and which form a p-n junction, a first part of the first portion of doped semiconductor being arranged between a second part of the first portion of doped semiconductor and the second portion of doped semiconductor; 
 dielectric portions that cover side flanks of the first part of the first portion of doped semiconductor and side flanks of the second portion of doped semiconductor; 
 a second electrode electrically coupled to the second portion of doped semiconductor and such that the second portion of doped semiconductor is arranged between the second electrode and the first portion of doped semiconductor; 
 and wherein the first metal electrode is arranged against outer side flanks of the dielectric portions and against side flanks of the second part of the first portion of doped semiconductor such that the first metal electrode is electrically coupled to the first portion of doped semiconductor and electrically insulated from the second portion of doped semiconductor. 
 
     
     
       3. The method according to  claim 1 , further including, between the production of the photo-emitting and/or photo-receiving component and the treatment of the face of the first metal electrode, or after the removing of the support, an electrical and mechanical coupling of the photo-emitting and/or photo-receiving component, on the side opposite the emitting and/or receiving face, to at least one electronic control circuit. 
     
     
       4. The method according to  claim 1 , wherein the treatment of the face of the first metal electrode includes a deposition of at least one wettable material on the face of the first metal electrode, or, when the first metal electrode includes at least one first wettable metal material covered by at least one second non-wettable material, an etching of the second non-wettable material present on the face of the first metal electrode. 
     
     
       5. The method according to  claim 1 , further including, between the producing of the metal optical separation grid and the fastening of the metal optical separation grid, the deposition of at least one brazing material on the metal optical separation grid. 
     
     
       6. The method according to  claim 1 , wherein the metal optical separation grid is produced on the support with at least one sacrificial layer arranged between the metal optical separation grid and the support, and wherein the removing of the support is produced by suppressing the sacrificial layer. 
     
     
       7. The method according to  claim 6 , wherein:
 the material of the sacrificial layer is able to be selectively etched with regards to the material of the metal optical separation grid; 
 the method further includes, between the producing of the metal optical separation grid and the fastening of the metal optical separation grid, a partial etching of the sacrificial layer such that remaining portions of the sacrificial layer are located between the metal optical separation grid and the support; 
 the removing of the support is produced by suppressing the remaining portions of the sacrificial layer. 
 
     
     
       8. The method according to  claim 6 , wherein:
 the sacrificial layer includes at least one material able to be dissolved in a solvent, and wherein the removing of the support includes at least one putting of the sacrificial layer into contact with the solvent generating a dissolution of the material of the sacrificial layer, or 
 the sacrificial layer includes at least polyimide, and wherein the removing of the support includes at least one putting of the sacrificial layer into contact with a plasma generating an etching of the polyimide. 
 
     
     
       9. The method according to  claim 1 , wherein:
 the metal optical separation grid is produced on the support with at least one temporary adhesive layer arranged between the metal optical separation grid and the support; 
 the temporary adhesive layer includes at least one material of which the adhesive properties are able to be degraded starting from a given temperature that said material is exposed to, and the fastening of the metal optical separation grid is implemented at temperature greater than or equal to said given temperature. 
 
     
     
       10. The method according to  claim 1 , wherein:
 the metal optical separation grid is produced on the support with at least one temporary adhesive layer arranged between the metal optical separation grid and the support; 
 the temporary adhesive layer includes at least one material of which the adhesive properties are able to be degraded when said material is exposed to electromagnetic radiation, and the removing of the support includes at least one exposure of the temporary adhesive layer to the electromagnetic radiation through the support. 
 
     
     
       11. The method according to  claim 1 , wherein:
 the metal optical separation grid is produced on the support with at least one oxide layer and at least one platinum layer arranged between the metal optical separation grid and the support; 
 the removing of the support includes at least one mechanical separation at the interface between the oxide layer and the platinum layer. 
 
     
     
       12. The method according to  claim 1 , wherein the producing of the metal optical separation grid further includes the producing, on the support, of at least one wavelength converting element of a radiation intended for being emitted and/or received by the photo-emitting and/or photo-receiving component, arranged between portions of the metal optical separation grid such that after the fastening of the metal optical separation grid, the wavelength converting element is arranged facing the semiconductor stack of the photo-emitting and/or photo-receiving component. 
     
     
       13. The method according to  claim 12 , wherein the wavelength converting element includes phosphorus. 
     
     
       14. The method according to  claim 1 , wherein:
 several photo-emitting and/or photo-receiving components are produced and form a pixel matrix of the photo-emitting and/or photo-receiving device; 
 the first metal electrode is arranged around each one of the photo-emitting and/or photo-receiving components and is common to the photo-emitting and/or photo-receiving components.