Metal structure and method of manufacturing the same and metal wire and semiconductor device and electronic device

Abstract

A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same.

What is claimed is: 
     
       1. A method of manufacturing a metal structure, the method comprising:
 forming a metal layer comprising a metal and a nano-abrasive, the nano-abrasive having an average particle diameter of less than 5 nanometers, wherein the forming of the metal layer comprises: preparing an electrodeposition coating solution comprising a metal salt, the nano-abrasive, and a solvent, and disposing a substrate comprising a conductive layer and an opposite electrode in the electrodeposition coating solution and performing electrodeposition by applying a current between the conductive layer and the opposite electrode; and 
 supplying slurry on the metal layer to perform chemical mechanical polishing. 
 
     
     
       2. The method of  claim 1 , wherein the slurry does not comprise an abrasive having an average particle diameter of greater than or equal to about 3 nanometers. 
     
     
       3. The method of  claim 1 , wherein the slurry is an abrasive-free slurry. 
     
     
       4. The method of  claim 1 , wherein the slurry comprises an amino acid or a derivative thereof. 
     
     
       5. The method of  claim 1 , wherein the nano-abrasive comprises a carbon abrasive. 
     
     
       6. The method of  claim 5 , wherein the carbon abrasive comprises fullerene or a derivative thereof, graphene, graphite, a carbon nanotube, a carbon dot, or a combination thereof. 
     
     
       7. The method of  claim 1 , wherein the metal comprises copper, silver, gold, aluminum, calcium, zinc, tungsten, iron, tin, platinum, nickel, or a combination thereof. 
     
     
       8. The method of  claim 1 , wherein the metal salt comprises a copper salt, a silver salt, a gold salt, an aluminum salt, a calcium salt, a zinc salt, a tungsten salt, an iron salt, a tin salt, a platinum salt, a nickel salt, or a combination thereof. 
     
     
       9. A method of manufacturing a semiconductor device comprising forming a metal wire by the manufacturing method of  claim 1 .