Advanced memory structure and device

Abstract

Memory devices and methods are provided. In one aspect, a memory device may comprise a first field element, a second field element, a movable magnetic element, and a first heater. The first field element may be a superconductor. The second field element may be disposed facing the first field element and at a first distance from the first field element. The movable magnetic element may be repelled by the second field element and disposed in a space between the first field element and the second field element. The first heater may be arranged near the first field element. The movable magnetic element may move toward the first field element in response to a first electric current that passes through the first heater.

What is claimed is: 
     
       1. A memory structure, comprising:
 a first field element comprising a superconductor; 
 a second field element disposed facing the first field element, at a first distance from the first field element, and coupled to the first field element to create a force field; 
 a movable magnetic element disposed in a space between the first field element and the second field element to be controlled by the force field, the movable magnetic element being repelled by the second field element; and 
 a heater arranged near the first field element, the movable magnetic element moving toward the first field element in response to an electric current passing through the heater. 
 
     
     
       2. A memory device, comprising:
 a control circuitry; and 
 at least one array of memory structures, each memory structure comprising: 
 a first field element comprising a superconductor; 
 a second field element disposed facing the first field element, at a first distance from the first field element, and coupled to the first field element to create a force field; 
 a movable magnetic element disposed in a space between the first field element and the second field element to be controlled by the force field, the movable magnetic element being repelled by the second field element; and 
 a first heater arranged near the first field element, the movable magnetic element moving toward the first field element in response to a first electric current passing through the first heater. 
 
     
     
       3. The device according to  claim 2 , wherein the second field element comprises a superconductor. 
     
     
       4. The device according to  claim 2 , wherein the second field element comprises a first magnetic element. 
     
     
       5. The device according to  claim 2 , wherein each memory structure further including:
 two conductors, the two conductors being electrically coupled after the movable magnetic element moves toward the first field element in response to the first electric current passing through the first heater. 
 
     
     
       6. The device according to  claim 2 , wherein each memory structure further including:
 a third field element comprising a superconductor; 
 the first field element and the third field element disposed side by side and separated by a predetermined distance, the third field element facing the second field element and arranged close to the first heater, the first field element and the third field element being electrically coupled after the movable magnetic element moves toward the first field element in response to the first electric current passing through the first heater. 
 
     
     
       7. The device according to  claim 2 , wherein the first field element loses superconductivity partially in response to the first electric current passing through the first heater. 
     
     
       8. The device according to  claim 7 , wherein each memory structure further including:
 a fourth field element comprising a superconductor; 
 a fifth field element comprising a superconductor and disposed facing the fourth field element and at a second distance from the fourth field element; 
 a second heater arranged near the fourth field element; and 
 a third heater arranged near the fifth field element. 
 
     
     
       9. The device according to  claim 8 , wherein the movable magnetic element moves toward the fourth field element in response to a second electric current passing through the second heater. 
     
     
       10. The device according to  claim 8 , wherein each memory structure further including:
 a sixth field element comprising a superconductor; 
 a seventh field element comprising a superconductor and disposed facing the sixth field element and at a third distance from the sixth field element; 
 a fourth heater arranged near the sixth field element; and 
 a fifth heater arranged near the seventh field element. 
 
     
     
       11. The device according to  claim 10 , wherein the movable magnetic element moves toward the sixth field element in response to a third electric current passing through the fourth heater. 
     
     
       12. A method for fabricating an array of memory structures, comprising:
 depositing a first layer of a first material; 
 forming a plurality of field elements out of the first material; 
 depositing a second layer of a first magnetic material, the second layer of the first magnetic material disposed between two layers of a filling material; 
 forming a plurality of magnetic elements out of the first magnetic material; 
 depositing a third layer of a conductive material; 
 forming a plurality of conductors out of the conductive material; 
 depositing a fourth layer of a first superconducting material; 
 forming a plurality of superconductors out of the first superconducting material; 
 depositing a fifth layer of an electrically resistive material; and 
 forming a plurality of heaters out of the electrically resistive material; 
 wherein the plurality of magnetic elements becomes movable after the filling material that surrounds each magnetic element is removed. 
 
     
     
       13. The method according to  claim 12 , wherein the first material includes a second superconducting material. 
     
     
       14. The method according to  claim 12 , wherein the first material includes a second magnetic material. 
     
     
       15. An electronic device, comprising:
 a microprocessor; 
 a memory device; 
 a controller controlling the memory device; 
 an output module; and 
 an input module; 
 the memory device comprising at least one array of memory structures, each memory structure comprising: 
 a first field element comprising a superconductor; 
 a second field element disposed facing the first field element, at a first distance from the first field element, and coupled to the first field element to create a force field; 
 a movable magnetic element disposed in a space between the first field element and the second field element to be controlled by the force field, the movable magnetic element being repelled by the second field element; and 
 a first heater arranged near the first field element, the movable magnetic element moving toward the first field element in response to a first electric current passing through the first heater. 
 
     
     
       16. The device according to  claim 15 , wherein each memory structure further including:
 a third field element comprising a superconductor; 
 the first field element and the third field element disposed side by side and separated by a predetermined distance, the third field element facing the second field element and arranged close to the first heater, the first field element and the third field element being electrically coupled after the movable magnetic element moves toward the first field element in response to the first electric current passing through the first heater. 
 
     
     
       17. The device according to  claim 15 , wherein each memory structure further including:
 two conductors; 
 the two conductors being electrically coupled after the movable magnetic element moves toward the first field element in response to the first electric current passing through the first heater. 
 
     
     
       18. The device according to  claim 15 , wherein the first field element loses superconductivity partially in response to the first electric current passing through the first heater. 
     
     
       19. The device according to  claim 18 , wherein each memory structure further including:
 a fourth field element comprising a superconductor; 
 a fifth field element comprising a superconductor and disposed facing the fourth field element and at a second distance from the fourth field element; 
 a second heater arranged near the fourth field element; and 
 a third heater arranged near a sixth field element. 
 
     
     
       20. The device according to  claim 19 , wherein each memory structure further including:
 the sixth field element comprising a superconductor; 
 a seventh field element comprising a superconductor and disposed facing the sixth field element and at a third distance from the sixth field element; 
 a fourth heater arranged near the sixth field element; and 
 a fifth heater arranged near the seventh field element.