Plating system and method of plating wafer

Abstract

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

What is claimed is: 
     
       1. A plating system, comprising:
 an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises:
 an inlet configured to introduce plating solution into the plating region of the electroplating chamber; and 
 an outlet configured to remove the plating solution from the plating region of the electroplating chamber; 
 
 a barrier configured to inhibit removal of the plating solution from the plating region; 
 a barrier adjustment device configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region; and 
 a sensor configured to sense a parameter of a plating process whereby the wafer is plated with anode material of an anode within the electroplating chamber, wherein the barrier adjustment device adjusts the angle based upon a signal from the sensor indicative of the parameter. 
 
     
     
       2. The plating system of  claim 1 , wherein anode material is transferred from the anode to the wafer during the plating process. 
     
     
       3. The plating system of  claim 1 , wherein:
 the wafer is over the barrier; and 
 the barrier is over the anode. 
 
     
     
       4. The plating system of  claim 1 , wherein an opening in the anode overlies the inlet of the electroplating chamber, and the plating system comprises:
 a pump configured to conduct the plating solution into the plating region of the electroplating chamber via the inlet of the electroplating chamber. 
 
     
     
       5. The plating system of  claim 1 , wherein:
 the inner sidewall of the barrier is tapered. 
 
     
     
       6. The plating system of  claim 1 , wherein the electroplating chamber comprises:
 a cone overlying the wafer; and 
 a wafer support structure configured to maintain a position of the wafer between the anode and the cone. 
 
     
     
       7. The plating system of  claim 1 , comprising:
 a rotational structure configured to rotate the wafer in the electroplating chamber. 
 
     
     
       8. The plating system of  claim 1 , wherein the parameter comprises at least one of a deposition rate, a plating thickness, or a pressure of the plating solution. 
     
     
       9. The plating system of  claim 1 , comprising:
 a high resistance virtual anode (HRVA) within the electroplating chamber, wherein the barrier overlies the HRVA; and 
 a membrane within the electroplating chamber, wherein the membrane is between the anode and the HRVA. 
 
     
     
       10. The plating system of  claim 8 , wherein:
 the HRVA is a porous structure through which the plating solution flows. 
 
     
     
       11. A plating system, comprising:
 an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises:
 an inlet configured to introduce plating solution into the plating region of the electroplating chamber; and 
 an outlet configured to remove the plating solution from the plating region of the electroplating chamber; 
 
 a high resistance virtual anode (HRVA) within the electroplating chamber; 
 a barrier, overlying the HRVA, configured to inhibit removal of the plating solution from the plating region; 
 a barrier adjustment device configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region; and 
 a sensor configured to sense a parameter of a plating process whereby the wafer is plated with anode material of an anode within the electroplating chamber, wherein the barrier adjustment device adjusts the angle based upon a signal from the sensor indicative of the parameter. 
 
     
     
       12. The plating system of  claim 11 , wherein the HRVA is between the anode and the wafer. 
     
     
       13. The plating system of  claim 11 , wherein:
 the wafer is over the barrier. 
 
     
     
       14. The plating system of  claim 11 , wherein the electroplating chamber comprises:
 a cone overlying the wafer; and 
 a wafer support structure configured to maintain a position of the wafer between the anode and the cone. 
 
     
     
       15. The plating system of  claim 11 , comprising:
 a membrane within the electroplating chamber, wherein the membrane is between the anode and the HRVA. 
 
     
     
       16. The plating system of  claim 11 , wherein the parameter comprises at least one of a deposition rate, a plating thickness, or a pressure of the plating solution. 
     
     
       17. A plating system, comprising:
 an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises:
 an inlet configured to introduce plating solution into the plating region of the electroplating chamber; and 
 an outlet configured to remove the plating solution from the plating region of the electroplating chamber; 
 
 an anode within the electroplating chamber, wherein:
 an opening in the anode overlies the inlet of the electroplating chamber; and 
 anode material from the anode is transferred from the anode to the wafer during a plating process; 
 
 a pump configured to conduct the plating solution into the plating region of the electroplating chamber via the inlet of the electroplating chamber; 
 a high resistance virtual anode (HRVA) within the electroplating chamber, wherein:
 the HRVA is over the anode; 
 the HRVA is a porous structure through which the plating solution flows; and 
 the HRVA comprises non-conductive material; 
 
 a barrier, overlying the HRVA, configured to inhibit removal of the plating solution from the plating region; 
 a barrier adjustment device configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region; and 
 a sensor configured to sense a parameter of a plating process whereby the wafer is plated with the anode material of the anode, wherein the barrier adjustment device adjusts the angle based upon a signal from the sensor indicative of the parameter. 
 
     
     
       18. The plating system of  claim 17 , wherein the electroplating chamber comprises:
 a cone overlying the wafer; and 
 a wafer support structure configured to maintain a position of the wafer between the anode and the cone. 
 
     
     
       19. The plating system of  claim 17 , comprising:
 a membrane within the electroplating chamber, wherein the membrane is between the anode and the HRVA. 
 
     
     
       20. The plating system of  claim 17 , wherein the sensor is at least one of a proximity sensor, an optical sensor, an image sensor, a camera, an infrared sensor, or a pressure sensor.