Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material

Abstract

A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

What is claimed is: 
     
       1. A cyclic deposition process for forming a metal-containing material, the cyclic deposition process comprising:
 providing a first gas-phase precursor from a first gas-phase reactant source vessel in fluid communication with a reaction chamber to the reaction chamber to form a first metal species, the first gas-phase precursor comprising a metal compound having a formula: (adduct) n -M-X a , where each adduct is an adduct forming ligand, where M is a first metal comprising a group 3-group 12 metal, where n is from 1 to 4, where X is a halide or other ligand and where a is from 1 to 4; and 
 providing a second gas-phase reactant comprising a compound having a general formula of R-M-H, wherein R is an organic group and M is a second metal, to react with the first metal species to thereby form the metal-containing material. 
 
     
     
       2. The cyclic deposition process of  claim 1 , wherein the first metal and the second metal are the same. 
     
     
       3. The cyclic deposition process of  claim 1 , wherein the first metal is cobalt (Co), copper (Cu), or nickel (Ni). 
     
     
       4. The cyclic deposition process of  claim 1 , wherein the second metal is selected from the group consisting of Ge, Ga, In and Sn. 
     
     
       5. The cyclic deposition process of  claim 1 , wherein the second metal comprises Ge. 
     
     
       6. The cyclic deposition process of  claim 1 , wherein the second metal comprises In. 
     
     
       7. The cyclic deposition process of  claim 1 , wherein the second metal comprises Ga. 
     
     
       8. The cyclic deposition process of  claim 1 , wherein the compound having a general formula of R-M-H has formula of R (x-n) -M X -H n , wherein X is the formal oxidation state of the metal and n is 1 to 5, and wherein R comprises an alkyl group or other organic group. 
     
     
       9. The cyclic deposition process of  claim 1 , wherein R is independently selected from the group consisting of C1-C10 alkyl groups. 
     
     
       10. The cyclic deposition process of  claim 1 , wherein R is cyclopentadienyl, amido, alkoxy, amidinato, guanidinato, imido, carboxylato, β-diketonato, β-ketoiminato, malonato, β-diketiminato group with or without additional donor functionalities. 
     
     
       11. The cyclic deposition process of  claim 1 , wherein the metal-containing material comprises Co 3 Sn 2 , Ni 3 Sn 2 , Ni 2 Ge, Ni 5 Ge 3 , Ni 19 Ge 12 , or NiGe. 
     
     
       12. The cyclic deposition process of  claim 1 , wherein the first metal is selected from the group consisting of Group 8-11 metals. 
     
     
       13. The cyclic deposition process of  claim 1 , wherein the first metal is a transition metal and wherein the adduct forming ligands coordinates to the transition metal through at least one of a nitrogen atom, a phosphorous atom, an oxygen atom, or a sulfur atom. 
     
     
       14. The cyclic deposition process of  claim 1 , wherein the second gas-phase reactant comprises a tributylmetal hydride. 
     
     
       15. The cyclic deposition process of  claim 1 , wherein the first gas-phase reactant comprises a metal halide compound comprising a multidentate nitrogen containing adduct ligand. 
     
     
       16. The cyclic deposition process of  claim 15 , wherein the adduct ligand comprises two nitrogen atoms, and wherein each of nitrogen atoms bonded to at least one carbon atom. 
     
     
       17. The cyclic deposition process of  claim 1 , wherein the first gas-phase reactant comprises at least one of cobalt chloride (TMEDA) and nickel chloride (TMPDA). 
     
     
       18. The cyclic deposition process of  claim 17 , wherein the second gas-phase reactant comprises one or more of TBTH and TBGH.