Silicon based melting composition and manufacturing method for silicon carbide single crystal using the same

Abstract

A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1.SiaYbFec  [Formula 1]In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8,the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2.

What is claimed is: 
     
       1. A method for manufacturing a silicon carbide single crystal, comprising:
 preparing a silicon carbide seed crystal; 
 preparing a silicon-based molten composition including silicon (Si), yttrium (Y), and iron (Fe), and as expressed in Formula 1; 
 forming a molten solution including the silicon-based molten composition and carbon (C); and 
 obtaining the silicon carbide single crystal on the silicon carbide seed crystal from the surface of the molten solution:
   Si a Y b Fe c   [Formula 1]
 
 
 wherein, in Formula 1, the a is equal to or greater than 0.5 and equal to or less than 0.7, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2, 
 wherein in the obtaining of the silicon carbide single crystal, a yttrium silicide is not precipitated, and 
 wherein a growing speed of the silicon carbide single crystal is equal to or greater than 0.1 mm/h. 
 
     
     
       2. The method of  claim 1 , wherein
 the b is equal to or greater than 0.2 and equal to or less than 0.25, and the c is equal to or greater than 0.15 and equal to or less than 0.2. 
 
     
     
       3. The method of  claim 1 , wherein
 the forming of the molten solution includes inserting the silicon-based molten composition into a crucible and heating the silicon-based molten composition in the crucible. 
 
     
     
       4. The method of  claim 3 , wherein
 the heating includes heating the molten solution to be 1800 degrees (° C.). 
 
     
     
       5. The method of  claim 3 , wherein
 a carbon solubility of the molten solution is in a saturated state. 
 
     
     
       6. The method of  claim 5 , wherein
 a temperature gradient of −20° C./cm is formed in a direction from the inside of the molten solution to the surface of the molten solution, and the silicon carbide seed crystal is allowed to contact the surface of the molten solution. 
 
     
     
       7. The method of  claim 1 , wherein the silicon-based molten composition consists of silicon (Si), yttrium (Y), and iron (Fe), and as expressed in the Formula 1.