Apparatus for generating magnetic fields during semiconductor processing

Abstract

A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

The invention claimed is: 
     
       1. An apparatus for influencing ion trajectories onto a substrate, comprising:
 an annular assembly configured to completely surround a periphery of the substrate in a physical vapor deposition (PVD) chamber; 
 one or more of a plurality of discrete permanent magnets each embedded in the annular assembly in a vertical pole orientation and spaced symmetrically around the annular assembly in respective one or more insertion holes, the one or more of the plurality of discrete permanent magnets is configured to form magnetic field lines between a south pole and a north pole of each one of the one or more of the plurality of discrete permanent magnets; 
 an annular recess formed in the annular assembly above and outer of the one or more insertion holes; and 
 an annular overhang formed above the annular recess of the annular assembly and above a portion of each of the one or more insertion holes, wherein the annular overhang is configured to retain the one or more of the plurality of discrete permanent magnets at a top by limiting upward movement of the one or more of the plurality of discrete permanent magnets. 
 
     
     
       2. The apparatus of  claim 1 , wherein the annular assembly is a reflector with a sloping inner portion that is configured to reflect radiant energy towards a bottom surface of the substrate. 
     
     
       3. The apparatus of  claim 1 , wherein one or more of the plurality of discrete permanent magnets is retained in the annular assembly by a plug inserted beneath the one or more of the plurality of discrete permanent magnets and the annular overhang. 
     
     
       4. The apparatus of  claim 3 , wherein the plug includes a gas relief hole. 
     
     
       5. The apparatus of  claim 1 , wherein the one or more of the plurality of discrete permanent magnets is retained in the annular assembly by a captive retention apparatus configured to at least partially block the one or more insertion holes at a bottom. 
     
     
       6. The apparatus of  claim 1 , further including one or more gas relief holes in the annular assembly, wherein the one or more gas relief holes are configured to allow gas to pass from around the one or more of the plurality of discrete permanent magnets during drawn down of the PVD chamber. 
     
     
       7. The apparatus of  claim 1 , wherein the one or more of the plurality of discrete permanent magnets is a cylindrical magnet that is inserted into the one or more insertion holes in the annular assembly. 
     
     
       8. The apparatus of  claim 7 , wherein the one or more of the plurality of discrete permanent magnets is oriented south pole up. 
     
     
       9. The apparatus of  claim 7 , wherein the one or more of the plurality of discrete permanent magnets has a diameter of approximately 0.5 inches to approximately 0.75 inches and a height of approximately 2.0 inches to approximately 3.0 inches. 
     
     
       10. The apparatus of  claim 1 , wherein the one or more of the plurality of discrete permanent magnets has a maximum energy product of at least 45 MGOe. 
     
     
       11. The apparatus of  claim 1 , wherein the annular assembly has cooling channels that are configured to cool the annular assembly and the one or more of the plurality of discrete permanent magnets, wherein the cooling channels are separated from the one or more of the plurality of discrete permanent magnets. 
     
     
       12. The apparatus of  claim 1 , wherein the one or more of the plurality of discrete permanent magnets is configured to provide an increase in B-field of approximately 15 gauss at an edge region of the substrate. 
     
     
       13. The apparatus of  claim 1 , wherein the one or more of the plurality of discrete permanent magnets is configured to provide magnetic field lines between respective poles of each of the plurality of discrete permanent magnets that intersect with the substrate to generate perpendicular ion trajectories onto the substrate in an edge region of the substrate. 
     
     
       14. The apparatus of  claim 1 , wherein the one or more of the plurality of discrete permanent magnets includes at least 16 magnets. 
     
     
       15. An apparatus for depositing copper onto a substrate, comprising:
 a physical vapor deposition (PVD) chamber with a processing volume that is configured to deposit the copper on the substrate and configured to reflow the copper deposited on the substrate using a radiant energy reflector assembly with an annular shape; 
 a substrate support that is configured to hold the substrate for processing within the PVD chamber; 
 the radiant energy reflector assembly surrounds the substrate support and is configured to direct radiant energy towards a bottom surface of the substrate; 
 one or more of a plurality of permanent magnets each embedded in the radiant energy reflector assembly in a vertical pole orientation that is configured to form magnetic field lines between a south pole and a north pole of each one of the plurality of permanent magnets, the one or more of the plurality of permanent magnets is spaced symmetrically around the radiant energy reflector assembly in respective one or more insertion holes; 
 an annular recess formed in the radiant energy reflector assembly above and outer of the one or more insertion holes; and 
 an annular overhang formed above the annular recess of the radiant energy reflector assembly and above a portion of each of the one or more insertion holes, wherein the annular overhang is configured to retain the one or more of the plurality of permanent magnets at a top by limiting upward movement of the one or more of the plurality of permanent magnets. 
 
     
     
       16. The apparatus of  claim 15 , further including one or more gas relief holes in the radiant energy reflector assembly, wherein the one or more gas relief holes are configured to allow gas to pass from around the one or more of the plurality of permanent magnets during drawn down of the PVD chamber to a vacuum state. 
     
     
       17. The apparatus of  claim 15 , wherein the one or more of the plurality of permanent magnets has a diameter of approximately 0.5 inches to approximately 0.75 inches and a height of approximately 2.0 inches to approximately 3.0 inches. 
     
     
       18. The apparatus of  claim 15 , wherein the radiant energy reflector assembly has cooling channels, separated from the one or more of the plurality of permanent magnets, that are configured to cool the radiant energy reflector assembly and the one or more of the plurality of permanent magnets to approximately 65 degrees Celsius. 
     
     
       19. The apparatus of  claim 15 , wherein the one or more of the plurality of permanent magnets is configured to provide the magnetic field lines between respective poles of each of the plurality of permanent magnets such that the magnetic field lines intersect with a top surface of the substrate to generate perpendicular ion trajectories onto the substrate in an edge region of the substrate. 
     
     
       20. An apparatus for influencing ion trajectories onto a substrate, comprising:
 a radiant energy reflector assembly configured to completely surround a periphery of a substrate support in a physical vapor deposition (PVD) chamber, wherein the radiant energy reflector assembly is configured to be positioned internally to the PVD chamber to direct radiant energy towards a bottom surface of the substrate, wherein the radiant energy reflector assembly includes cooling channels that are configured to cool the radiant energy reflector assembly, and wherein the cooling channels are separated from one or more of a plurality of discrete permanent magnets; 
 the one or more of the plurality of discrete permanent magnets each inserted into respective one or more insertion holes in the radiant energy reflector assembly in a vertical pole orientation and spaced symmetrically around the radiant energy reflector assembly in the one or more insertion holes, wherein the one or more of the plurality of discrete permanent magnets have a diameter of approximately 0.5 inches to approximately 0.75 inches and a height of approximately 2.0 inches to approximately 3.0 inches, and wherein the one or more of the plurality of discrete permanent magnets have a maximum energy product of at least 45 MGOe; 
 an annular recess formed in the radiant energy reflector assembly above and outer of the one or more insertion holes; and 
 an annular overhang formed above the annular recess of the radiant energy reflector assembly and above a portion of each of the one or more insertion holes, wherein the annular overhang is configured to retain the one or more of the plurality of discrete permanent magnets at a top by limiting upward movement of the one or more of the plurality of discrete permanent magnets.