Sputtering system with a plurality of cathode assemblies

Abstract

A magnetron sputtering system includes a substrate mounted within a vacuum chamber. A plurality of cathode assemblies includes a first set of cathode assemblies and a second set of cathode assemblies, and is configured for reactive sputtering. Each cathode assembly includes a target comprising sputterable material and has an at least partially exposed planar sputtering surface. A target support is configured to support the target in the vacuum chamber and rotate the target relative to the vacuum chamber about a target axis. A magnetic field source includes a magnet array. A cathode assemblies controller assembly is operative to actuate the first set of cathode assemblies without actuating the second set of cathode assemblies, and to actuate the second set of cathode assemblies without actuating the first set of cathode assemblies.

What is claimed is: 
     
       1. A magnetron sputtering system comprising, in combination:
 a vacuum chamber; 
 a substrate mount for mounting a substrate within the vacuum chamber; 
 a plurality of cathode assemblies including a first set of one or more cathode assemblies and a second set of one or more cathode assemblies, and configured for sputtering, each cathode assembly comprising:
 a target comprising sputterable material and having an at least partially exposed planar sputtering surface, the target of the first set of one or more cathode assemblies being formed of a first material and the target of the second set of one or more cathode assemblies being formed of a second material different than the first material; 
 a target support configured to support the target in the vacuum chamber and rotate the target relative to the vacuum chamber about a target axis; and 
 a magnetic field source including a magnet array mounted to be substantially stationary relative to the vacuum chamber during sputtering, the target being positioned between the magnet array and the substrate mount; and 
 
 a cathode assemblies controller assembly operative to actuate the first set of cathode assemblies for sputtering the sputterable material of the first set of cathode assemblies without actuating the second set of cathode assemblies, and to actuate the second set of cathode assemblies for sputtering the sputterable material of the second set of cathode assemblies without actuating the first set of cathode assemblies. 
 
     
     
       2. The magnetron sputtering system of  claim 1 , further comprising a third set of one or more cathode assemblies, the target of the third set of one or more cathode assemblies being formed of a third material different than the first and second materials. 
     
     
       3. The magnetron sputtering system of  claim 2 , further comprising a fourth set of one or more cathode assemblies, the target of the fourth set of one or more cathode assemblies being formed of a third material different than the first, second, and third materials. 
     
     
       4. The magnetron sputtering system of  claim 1 , wherein the cathode assemblies controller assembly comprises a timer operable to actuate at least one set of cathode assemblies for sputtering for a period of time. 
     
     
       5. The magnetron sputtering system of  claim 4 , wherein the timer is operable to actuate the at least one set of cathode assemblies for sputtering for a predetermined period of time. 
     
     
       6. The magnetron sputtering system of  claim 1 , wherein the substrate is configured to rotate at a speed between approximately 300 rpm and approximately 500 rpm. 
     
     
       7. The magnetron sputtering system of  claim 1 , wherein the cathode assemblies are arranged in a confocal orientation about a central axis. 
     
     
       8. The magnetron sputtering system of  claim 1 , wherein the substrate is configured to rotate about a central axis, and each target axis is oriented with respect to the central axis at an angle of greater than 0 degrees and less than 90 degrees. 
     
     
       9. The magnetron sputtering system of  claim 1 , further comprising a first pin mask mounted in the vacuum chamber and configured to mask a portion of a substrate mounted on the substrate mount. 
     
     
       10. The magnetron sputtering system of  claim 9 , wherein a lateral width of the first pin mask has a first value at its distal end, a second value at a central point, and a third value at its proximal end, wherein the third value is larger than the first value and smaller than the second value. 
     
     
       11. The magnetron sputtering system of  claim 9 , wherein the first pin mask is connected by an arm to a base that is pivotally mounted to the vacuum chamber. 
     
     
       12. The magnetron sputtering system of  claim 9 , further comprising at least one additional pin mask. 
     
     
       13. The magnetron sputtering system of  claim 9 , further comprising at least one additional pin mask having a profile different than a profile of the first pin mask, and laterally spaced from the first pin mask. 
     
     
       14. A magnetron sputtering system comprising, in combination:
 a vacuum chamber; 
 a substrate rotatably mounted about a central axis within the vacuum chamber; 
 a plurality of cathode assemblies arranged in a confocal orientation about the central axis, including a first set of cathode assemblies and a second set of cathode assemblies, and configured for reactive sputtering, each cathode assembly comprising:
 a target comprising sputterable material having an at least partially exposed planar sputtering surface; 
 a target support configured to support the target in the vacuum chamber and rotate the target relative to the vacuum chamber about a target axis; 
 a magnetic field source including a magnet array mounted to be substantially stationary relative to the vacuum chamber during sputtering, the target being positioned between the magnet array and the substrate; and 
 
 a first pin mask mounted in the vacuum chamber and configured to mask a portion of the substrate; 
 wherein the plurality of cathode assemblies is configured such that when the first set of cathode assemblies is operational the second set of cathode assemblies is idle, and when the second set of cathode assemblies is operational the first set of cathode assemblies is idle. 
 
     
     
       15. The magnetron sputtering system of  claim 14 , wherein a lateral width of the first pin mask has a first value at its distal end, a second value at a central point, and a third value at its proximal end, wherein the third value is larger than the first value and smaller than the second value. 
     
     
       16. The magnetron sputtering system of  claim 14 , further comprising at least one additional pin mask. 
     
     
       17. The magnetron sputtering system of  claim 14 , further comprising a cathode assemblies controller comprising a timer operable to control operation of the first set of cathode assemblies and the second set of cathode assemblies. 
     
     
       18. The magnetron sputtering system of  claim 14 , wherein the substrate is configured to rotate at a speed between approximately 300 rpm and approximately 500 rpm. 
     
     
       19. The magnetron sputtering system of  claim 14 , wherein each target axis is oriented with respect to the central axis at an angle of greater than 0 degrees and less than 90 degrees. 
     
     
       20. A magnetron sputtering system comprising, in combination:
 a vacuum chamber; 
 a substrate rotatably mounted about a central axis within the vacuum chamber and configured to rotate at a speed of between approximately 300 rpm and approximately 500 rpm; 
 a plurality of cathode assemblies arranged in a confocal orientation about the central axis, including a first set of two cathode assemblies and a second set of two cathode assemblies, and configured for reactive sputtering, each cathode assembly comprising:
 a target comprising sputterable material having an at least partially exposed planar sputtering surface, the target of the first set of cathode assemblies being formed of a first material and the target of the second set of cathode assemblies being formed of a second material different than the first material, 
 a target support configured to support the target in the vacuum chamber and rotate the target relative to the vacuum chamber about a target axis, each target axis being oriented with respect to the central axis at an angle of greater than 0 degrees and less than 90 degrees; and 
 a magnetic field source including a magnet array mounted to be substantially stationary relative to the vacuum chamber during sputtering, the target being positioned between the magnet array and the substrate; 
 
 a pin mask mounted in the vacuum chamber and configured to mask a portion of the substrate; and 
 a timer to control operation of the first set of cathode assemblies and the second set of cathode assemblies such that when the first set of cathode assemblies is operational the second set of cathode assemblies is idle, and when the second set of cathode assemblies is operational the first set of cathode assemblies is idle.