Substrate processing apparatus and method

Abstract

A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

The invention claimed is: 
     
       1. A substrate processing apparatus, comprising:
 a reaction chamber; 
 an outer chamber at least partly surrounding the reaction chamber and forming an intermediate volume therebetween; and 
 a substrate support within the reaction chamber, comprising a hollow inner volume,
 wherein the hollow inner volume and the intermediate volume are in fluid communication through a channel extending from the hollow inner volume to the intermediate volume, 
 and wherein the channel houses wirings which wirings extend within the channel from the substrate support to the intermediate volume. 
 
 
     
     
       2. The apparatus of  claim 1 , wherein the wirings exit the outer chamber through at least one feedthrough at the bottom of the outer chamber. 
     
     
       3. The apparatus of  claim 1 , wherein at least one feedthrough part is detachably attached to a connection flange attached to an assembly comprising at least a lower part of the reaction chamber and the substrate support. 
     
     
       4. The apparatus of  claim 3 , wherein the connection flange is detachably attached to a bottom flange of the outer chamber. 
     
     
       5. The apparatus of  claim 1 , comprising an actuator configured to lower and raise the reaction chamber, and a longitudinally extensional tubular part in a reaction chamber exhaust line allowing a vertical movement. 
     
     
       6. The apparatus of  claim 1 , wherein the apparatus is configured to adjust a vertical position of the substrate support by extending a length of the channel. 
     
     
       7. The apparatus of  claim 6 , comprising an actuator configured to lower and raise a level of a substrate table of the substrate support by changing a longitudinal dimension of a longitudinally extensional part that forms part of the channel. 
     
     
       8. The apparatus of  claim 1 , comprising antennas for plasma formation positioned within the reaction chamber above the substrate support. 
     
     
       9. The apparatus of  claim 8 , comprising precursor pipes extending into spaces in between the antennas and further within the reaction chamber to discharge non-plasma gas at points downstream from the antennas. 
     
     
       10. A substrate processing apparatus, comprising:
 a reaction chamber; 
 an outer chamber at least partly surrounding the reaction chamber and forming an intermediate volume therebetween; and 
 a substrate support within the reaction chamber, comprising a hollow inner volume,
 wherein the hollow inner volume and the intermediate volume are in fluid communication through a channel extending from the hollow inner volume to the intermediate volume; 
 
 an actuator configured to lower and raise the reaction chamber, and a longitudinally extensional tubular part in a reaction chamber exhaust line allowing a vertical movement; and 
 wirings wound around the longitudinally extensional tubular part.