Embedded microstrip transmission line

Abstract

Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

What is claimed is: 
     
       1. An apparatus, comprising:
 a superconducting material layer positioned on a raised portion of a dielectric substrate; and 
 a dielectric film that covers at least a portion of the superconducting material layer and at least a portion of the raised portion of the dielectric substrate, wherein the dielectric film has a loss tangent that is less than or equal to 5e−5 at a frequency that is between 4.5 gigahertz and 5.5 gigahertz. 
 
     
     
       2. The apparatus of  claim 1 , further comprising a superconducting electrode positioned on the dielectric film. 
     
     
       3. The apparatus of  claim 1 , wherein the raised portion extends from the surface of the dielectric substrate to a distal end, and wherein the superconducting material layer is on a surface of the distal end. 
     
     
       4. The apparatus of  claim 1 , further comprising a superconducting electrode positioned over the superconducting material layer. 
     
     
       5. The apparatus of  claim 4 , wherein the superconducting electrode extends from a first position over the superconducting material layer to a second position over a first surface of the dielectric substrate. 
     
     
       6. The apparatus of  claim 5 , wherein the superconducting material layer is located at a first height from the first surface of the dielectric substrate, wherein the superconducting electrode at the second position is located at a second height from the first surface, and wherein the first height is greater than the second height. 
     
     
       7. The apparatus of  claim 4 , wherein the superconducting material layer is a microstrip transmission line. 
     
     
       8. The apparatus of  claim 7 , wherein the superconducting electrode is a ground plane, and wherein the microstrip transmission line is embedded under the ground plane. 
     
     
       9. The apparatus of  claim 1 , wherein the apparatus is a qubit readout resonator. 
     
     
       10. A method, comprising:
 depositing a superconducting material layer onto a dielectric substrate; 
 positioning the superconducting material layer onto a raised portion of the dielectric substrate by etching into the superconducting material layer and the dielectric substrate; and 
 depositing a dielectric film onto the superconducting material layer, wherein the dielectric film has a loss tangent that is less than or equal to 5e−5 at a frequency that is between 4.5 gigahertz and 5.5 gigahertz. 
 
     
     
       11. The method of  claim 10 , wherein the etching forms the raised portion by recessing the dielectric substrate. 
     
     
       12. The method of  claim 11 , wherein the dielectric film extends over a portion of the dielectric substrate recessed by the etching. 
     
     
       13. The method of  claim 12 , wherein a superconducting electrode also extends over the portion of the dielectric substrate recessed by the etching. 
     
     
       14. The method of  claim 13 , further comprising:
 forming a superconducting qubit by depositing a superconducting metal onto the portion of the dielectric substrate recessed by the etching. 
 
     
     
       15. The method of  claim 10 , further comprising:
 removing a portion of the dielectric film from over a portion of the dielectric substrate recessed by the etching. 
 
     
     
       16. An apparatus, comprising:
 a first chip that includes a superconducting qubit positioned on a first dielectric substrate; and 
 a second chip bonded to the first chip that includes:
 a superconducting material layer positioned on a raised portion of a second dielectric substrate, and a dielectric film that covers at least a portion of the superconducting material layer and the raised portion, wherein the dielectric film has a loss tangent that is less than or equal to 5e−5 at a frequency that is between 4.5 gigahertz and 5.5 gigahertz wherein the raised portion extends from a surface of the second dielectric substrate. 
 
 
     
     
       17. The apparatus of  claim 16 , wherein the second chip further comprises a superconducting electrode positioned on the dielectric film. 
     
     
       18. The apparatus of  claim 17 , wherein the superconducting electrode is located between the dielectric film and the first chip. 
     
     
       19. The apparatus of  claim 18 , wherein the superconducting material layer is a qubit readout resonator. 
     
     
       20. The apparatus of  claim 19 , wherein the qubit readout resonator is positioned on the second chip.