US12288768B2ActiveUtilityA1

Method of manufacturing laminate

53
Assignee: LINTEC CORPPriority: Aug 26, 2019Filed: Aug 20, 2020Granted: Apr 29, 2025
Est. expiryAug 26, 2039(~13.1 yrs left)· nominal 20-yr term from priority
H10W 72/07332H10W 72/07331H10W 72/073H10W 72/013B22F 7/08B32B 2457/14B32B 15/04B32B 7/12B32B 7/06B82Y 40/00B82Y 30/00B22F 3/10B22F 7/04H01L 2224/8384H01L 2224/83201H01L 2224/83101H01L 24/83H10W 72/071
53
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Cited by
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References
14
Claims

Abstract

A method of manufacturing a laminate, the method including: providing a film-form firing material on a support sheet, the film-form firing material containing a sinterable metal particle and a binder component and having an identical or substantially identical shape and an identical size to a shape and size of a semiconductor chip; applying, to a substrate, the film-form firing material on the support sheet; peeling off the support sheet from the substrate and the film-form firing material; applying a back surface side of the semiconductor chip to the film-form firing material on the substrate to face each other; and sinter-bonding the semiconductor chip and the substrate by heating the film-form firing material to 200° C. or higher.

Claims

exact text as granted — not AI-modified
The invention claimed is: 
     
       1. A method of manufacturing a laminate, the method comprising:
 providing a film-form firing material on a support sheet, the film-form firing material containing sinterable metal particles and a binder component and having an identical or substantially identical shape and an identical size to a shape and size of a semiconductor chip to be applied; 
 applying, to a substrate, the film-form firing material on the support sheet; 
 peeling off the support sheet from the substrate and the film-form firing material; 
 applying a back surface side of the semiconductor chip to the film-form firing material on the substrate to face each other; and 
 after the support sheet has been peeled from the substrate and the film-form firing material, sinter-bonding the semiconductor chip and the substrate by heating the film-form firing material to 200° C. or higher. 
 
     
     
       2. The method of manufacturing a laminate according to  claim 1 , wherein the method includes sinter-bonding the semiconductor chip and the substrate by applying pressure of 5 MPa or greater to the film-form firing material in addition to heating the film-form firing material to 200° C. or higher. 
     
     
       3. The method of manufacturing a laminate according to  claim 1 , wherein the substrate is a ceramic substrate. 
     
     
       4. The method of manufacturing a laminate according to  claim 1 , wherein the support sheet comprises a substrate film and a pressure sensitive adhesive layer provided on an entire surface on the substrate film, and the film-form firing material is provided on the pressure sensitive adhesive layer of the support sheet. 
     
     
       5. The method of manufacturing a laminate according to  claim 1 , wherein the support sheet comprises a substrate film and a pressure sensitive adhesive layer provided in a peripheral edge portion on the substrate film, and the film-form firing material is provided in a region where the pressure sensitive adhesive layer is not provided on the substrate film of the support sheet. 
     
     
       6. The method of manufacturing a laminate according to  claim 4 , wherein the pressure sensitive adhesive layer has energy ray-curability. 
     
     
       7. The method of manufacturing a laminate according to  claim 6 , wherein the pressure sensitive adhesive layer is irradiated with an energy ray and the support sheet is peeled off from the film-form firing material. 
     
     
       8. The method of manufacturing a laminate according to  claim 1 , wherein the film-form firing material formed on a release film is transferred onto the support sheet to provide the film-form firing material on the support sheet. 
     
     
       9. The method of manufacturing a laminate according to  claim 8 , wherein the film-form firing material is formed on the release film by printing. 
     
     
       10. The method of manufacturing a laminate according to  claim 8 , wherein the film-form firing material is formed on the release film by punching using a mold having an identical or substantially identical shape and an identical size to a shape and size of the semiconductor chip to be applied. 
     
     
       11. The method of manufacturing a laminate according to  claim 1 , wherein the film-form firing material is provided on the support sheet by printing. 
     
     
       12. The method of manufacturing a laminate according to  claim 1 , wherein the support sheet is circular. 
     
     
       13. The method of manufacturing a laminate according to  claim 1 , wherein the support sheet can be wound into a reel, and the film-form firing materials are provided side-by-side at regular intervals on the support sheet. 
     
     
       14. The method of manufacturing a laminate according to  claim 1 , wherein the sinter bonding is applied to a precursor of the laminate consisting of the substrate, the film-form firing material, and the semiconductor chip.

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