Internal chamber processing method and substrate processing method

Abstract

The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S 100 ) of raising a pressure inside a chamber to a first pressure (P 1 ) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P 1 ) to a second pressure (P 2 ) after the pressurizing operation (S 100 ). The pressurizing operation (S 100 ) and the depressurizing operation (S 200 ) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

What is claimed is: 
     
       1. A substrate processing method comprising:
 an internal chamber processing operation through the internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the internal chamber processing method comprising:
 a pressurizing operation of raising a pressure inside a chamber to a first pressure P 1  higher than the atmospheric pressure by using a pressurized gas; and 
 a depressurizing operation of lowering the pressure inside the chamber from the first pressure P 1  to a second pressure P 2  after the pressurizing operation, 
 wherein the pressurizing operation and the depressurizing operation are performed in a state in which a substrate to be processed is removed from the inside of the chamber to react with impurities and remove them from inside the chamber, 
 wherein, in the pressurizing operation, the pressurized gas produces a by-product by reacting with impurities on a surface or inside at least one inner wall of the chamber and an internal member installed inside the chamber, 
 wherein, in the depressurizing operation, the by-product is discharged outside of the chamber; 
 
 a substrate inputting operation of inputting a substrate to be processed to the chamber after the internal chamber processing operation; 
 a substrate processing operation of performing substrate processing on the substrate input into the chamber; and 
 a substrate ejecting operation of ejecting the substrate processed through the substrate processing operation, 
 wherein the substrate inputting operation, the substrate processing operation, and the substrate ejecting operation are referred to as one unit process, and unit processes are repeatedly performed n times (n≥2). 
 
     
     
       2. The substrate processing method of  claim 1 , wherein the internal chamber processing operation is performed between the unit process and the unit processes or prior to a first unit process. 
     
     
       3. The substrate processing method of  claim 1 , wherein the internal chamber processing operation is performed between the unit processes and the unit process, and
 the substrate processing method further comprises a processing determination operation of determining whether or not processing on the inside of the chamber is necessary after the unit process is performed. 
 
     
     
       4. The substrate processing method of  claim 3 , wherein sheet resistance on the processed substrate is measured in the processing determination operation, and the internal chamber processing operation is performed when the measurement value is greater than or equal to a preset value, or the unit process is performed when the measurement value is less than the preset value. 
     
     
       5. The substrate processing method of  claim 1 , wherein the substrate processing operation comprises a substrate processing-pressurizing operation of raising a pressure inside the chamber to a pressure higher than the atmospheric pressure and a substrate processing-depressurizing operation of lowering the pressure inside the chamber after the substrate processing-pressurizing operation. 
     
     
       6. The substrate processing method of  claim 5 , wherein the substrate processing-depressurizing operation lowers the pressure inside the chamber to a pressure lower than the atmospheric pressure, and
 the substrate processing-pressurizing operation and the substrate processing-depressurizing operation are repeatedly performed several times. 
 
     
     
       7. An internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the internal chamber processing method comprising:
 a pressurizing operation of raising a pressure inside a chamber to a first pressure P 1  higher than the atmospheric pressure by using a pressurized gas; and 
 a depressurizing operation of lowering the pressure inside the chamber from the first pressure P 1  to a second pressure P 2  after the pressurizing operation, 
 wherein the pressurizing operation and the depressurizing operation are performed in a state in which a substrate to be processed is removed from the inside of the chamber to react with impurities and remove them from inside the chamber, 
 wherein, in the pressurizing operation, the pressurized gas produces a by-product by reacting with impurities on a surface or inside at least one inner wall of the chamber and an internal member installed inside the chamber, by raising a pressure inside a chamber to the first pressure by using a pressurized gas, 
 wherein, in the depressurizing operation, the by-product is discharged outside of the chamber by lowering the pressure inside the chamber from the first pressure to the second pressure, and 
 wherein a cleaning process on the inside of the chamber and the internal member by removing impurities from the chamber and the internal member through pressure variations caused by the supply and exhaust of the pressurized gas, thereby preventing residual by-products from remaining, is performed by the pressurizing operation and the depressurizing operation. 
 
     
     
       8. The internal chamber processing method of  claim 7 , wherein the second pressure P 2  is lower than the atmospheric pressure. 
     
     
       9. The internal chamber processing method of  claim 7 , wherein when the pressurizing operation and the depressurizing operation are referred to as one unit cycle, unit cycles are performed n times (n≥1). 
     
     
       10. The internal chamber processing method of  claim 7 , wherein the pressurizing operation comprises a pressure raising operation of raising the pressure inside the chamber to the first pressure P 1  and a high-pressure maintaining operation of maintaining the pressure inside the chamber at the first pressure P 1  for a certain period of time after the pressure raising operation. 
     
     
       11. The internal chamber processing method of  claim 7 , further comprising, prior to the pressurizing operation, a processing determination operation of determining whether or not processing on the inside of the chamber is necessary. 
     
     
       12. The internal chamber processing method of  claim 11 , wherein in the processing determination operation, sheet resistance on the substrate processed inside the chamber is measured, and it is determined that the pressurizing operation is performed when the measurement value is greater than or equal to a preset value. 
     
     
       13. The internal chamber processing method of  claim 7 , comprising a temperature raising operation of raising a temperature inside the chamber from a first temperature T 1  to a processing temperature T 2  higher than the room temperature, a high-temperature maintaining operation of maintaining the processing temperature T 2 , and a temperature lowering operation of lowering the temperature inside the chamber from the processing temperature T 2  to a second temperature T 3 ,
 wherein the pressurizing operation and the depressurizing operation are referred to as one unit cycle, unit cycles are performed n times (n≥1), and at least one of the unit cycles is performed during the high-temperature maintaining operation. 
 
     
     
       14. The internal chamber processing method of  claim 10 , comprising a temperature raising operation of raising a temperature inside the chamber from a first temperature T 1  to a processing temperature T 2  higher than the room temperature and a temperature lowering operation of lowering the temperature inside the chamber from the processing temperature T 2  to a second temperature T 3 ,
 wherein the temperature raising operation or the temperature lowering operation is performed during the high-pressure maintaining operation. 
 
     
     
       15. The internal chamber processing method of  claim 14 , wherein when the pressurizing operation and the depressurizing operation are referred to as one unit cycle, unit cycles are repeatedly performed n times (n≥2), and
 the temperature lowering operation is performed during the high-pressure maintaining operation of the n-th pressurizing operation. 
 
     
     
       16. The internal chamber processing method of  claim 7 , wherein the pressurized gas is a hydrogen gas H 2 . 
     
     
       17. The internal chamber processing method of  claim 16 , wherein in the pressurizing operation, surfaces of an inner wall of the chamber and an internal member installed inside the chamber are coated by coupling some or all of components of the pressurized gas to the surfaces of the inner wall of the chamber and the internal member installed inside the chamber. 
     
     
       18. The internal chamber processing method of  claim 17 , wherein at least one of the chamber and the internal member installed inside the chamber comprises a quartz material. 
     
     
       19. The internal chamber processing method of  claim 17 , wherein the internal member installed inside the chamber is installed to move to the inside and outside of the chamber and comprises a substrate support part for supporting at least one dummy substrate.