Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

Abstract

There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the act of forming the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

What is claimed is: 
     
       1. A processing method comprising:
 providing a substrate in a process chamber; and 
 forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, supplying an inert gas from a third supplier, supplying a second processing gas from a fourth supplier to the substrate, and exhausting the first processing gas, the inert gas from the first supplier, the inert gas from the third supplier, and the second processing gas via an exhaust port that is installed to face the second supplier while the substrate is interposed between the second supplier and the exhaust port in a plane view, 
 wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and the substrate, the straight line being interposed between the first supplier and the third supplier, wherein the first supplier, the second supplier and the third supplier are parallel to each other, and 
 wherein in the forming a film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier. 
 
     
     
       2. The method of  claim 1 , wherein in the forming a film, the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be different from each other. 
     
     
       3. The method of  claim 1 , wherein in the forming a film, one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier. 
     
     
       4. The method of  claim 3 , wherein in the forming a film, the one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than a flow rate of the first processing gas. 
     
     
       5. The method of  claim 3 , wherein in the forming a film, the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be lower than a flow rate of the first processing gas. 
     
     
       6. The method of  claim 3 , wherein in the forming a film, the one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than a flow rate of the first processing gas and the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be lower than the flow rate of the first processing gas. 
     
     
       7. The method of  claim 3 , wherein in the forming a film, the one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than a flow rate of the first processing gas and the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to zero. 
     
     
       8. The method of  claim 3 , wherein in the forming a film, the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to zero. 
     
     
       9. The method of  claim 1 , wherein in the forming a film,
 a condition, in which the substrate in-plane film thickness distribution of the film becomes a central convex distribution when the film is formed on a bare substrate, is established by setting the flow rate of the inert gas supplied from the first supplier to be equal to the flow rate of the inert gas supplied from the third supplier, and 
 a condition, in which the substrate in-plane film thickness distribution of the film becomes any distribution between a central convex distribution and a central concave distribution when the film is formed on a bare substrate, is established by setting the flow rate of the inert gas supplied from the first supplier to be different from the flow rate of the inert gas supplied from the third supplier. 
 
     
     
       10. The method of  claim 9 , wherein, when the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be equal to each other, the respective flow rates are set to be higher than a flow rate of the first processing gas. 
     
     
       11. The method of  claim 9 , wherein, when the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be different from each other, one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier, and the one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than a flow rate of the first processing gas. 
     
     
       12. The method of  claim 9 , wherein, when the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be different from each other, one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier, and the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be lower than a flow rate of the first processing gas. 
     
     
       13. The method of  claim 9 , wherein, when the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be different from each other, one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier, the one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than a flow rate of the first processing gas, and the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be lower than the flow rate of the first processing gas. 
     
     
       14. The method of  claim 9 , wherein, when the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be different from each other, one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier, the one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than a flow rate of the first processing gas, and the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to zero. 
     
     
       15. The method of  claim 9 , wherein, when the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier are set to be different from each other, one of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to be higher than the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier, and the other of the flow rate of the inert gas supplied from the first supplier and the flow rate of the inert gas supplied from the third supplier is set to zero. 
     
     
       16. The method of  claim 1 , wherein the second processing gas has a molecular structure different from a molecular structure of the first processing gas. 
     
     
       17. The method of  claim 16 , wherein in the forming a film, a cycle is performed a predetermined number of times, the cycle including:
 supplying the inert gas from the first supplier, supplying the first processing gas from the second supplier, and supplying the inert gas from the third supplier to the substrate in the process chamber; and 
 supplying the second processing gas to the substrate in the process chamber. 
 
     
     
       18. The method of  claim 17 , wherein in the supplying the second processing gas, the second processing gas is supplied from at least one selected from a group of the first supplier and the third supplier. 
     
     
       19. The method of  claim 1 , wherein the fourth supplier is the same as at least one selected from a group of the first supplier and the third supplier. 
     
     
       20. A method of manufacturing a semiconductor device comprising the method of  claim 1 . 
     
     
       21. A processing apparatus comprising:
 a process chamber in which a substrate is processed; 
 a first supply system configured to supply an inert gas from a first supplier to the substrate in the process chamber; 
 a second supply system configured to supply a first processing gas from a second supplier to the substrate in the process chamber; 
 a third supply system that is configured to supply an inert gas from a third supplier to the substrate in the process chamber; 
 a fourth supply system that is configured to supply a second processing gas from a fourth supplier to the substrate in the process chamber, wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and the substrate in the process chamber, the straight line being interposed between the first supplier and the third supplier, wherein the first supplier, the second supplier and the third supplier are parallel to each other; 
 an exhaust system that is configured to exhaust an inside of the process chamber via an exhaust port that is installed to face the second supplier while the substrate is interposed between the second supplier and the exhaust port in a plane view, and 
 a controller configured to be capable of controlling the first supply system, the second supply system, the third supply system, the fourth supply system, and the exhaust system so as to perform a process of forming a film on the substrate by supplying the inert gas from the first supplier, supplying the first processing gas from the second supplier, supplying the inert gas from the third supplier, supplying the second processing gas from the fourth supplier to the substrate provided in the process chamber, and exhausting the first processing gas, the inert gas from the first supplier, the inert gas from the third supplier, and the second processing gas via the exhaust port, wherein in the forming a film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier. 
 
     
     
       22. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a processing apparatus to perform a process comprising:
 providing a substrate in a process chamber; and 
 forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier, supplying a second processing gas from a fourth supplier to the substrate, and exhausting the first processing gas, the inert gas from the first supplier, the inert gas from the third supplier, and the second processing gas via an exhaust port that is installed to face the second supplier while the substrate is interposed between the second supplier and the exhaust port in a plane view, 
 wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and the substrate, the straight line being interposed between the first supplier and the third supplier, wherein the first supplier, the second supplier and the third supplier are parallel to each other, and 
 wherein in the forming a film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.