Semiconductor structure having conductive pad with protrusion and manufacturing method thereof

Abstract

The present application provides a semiconductor structure having a conductive pad with a protrusion, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first die including a first substrate, a first dielectric layer over the first substrate, a first conductive pad at least partially exposed through the first dielectric layer, a first bonding layer over the first dielectric layer, and a first via extending through the first bonding layer and coupled to the first conductive pad; and a second die including a second bonding layer bonded to the first bonding layer, a second substrate over the second bonding layer, and a second via extending through the second substrate and the second bonding layer, wherein a first contact surface area between the first bonding layer and the second via is substantially greater than a second contact surface area between the first via and the second via.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a first die including a first substrate, a first dielectric layer over the first substrate, a first conductive pad at least partially exposed through the first dielectric layer, a first bonding layer deposited over and contacted with top surfaces of the first dielectric layer and the first conductive pad, and a first via extending through the first bonding layer and coupled to the first conductive pad; and   a second die including a second bonding layer bonded to the first bonding layer, a second substrate over the second bonding layer, and a second via extending through the second substrate and the second bonding layer,   wherein a first contact surface between the first bonding layer and the second via is substantially greater than a second contact surface between the first via and the second via, wherein the first bonding area and the second via are in direct contact; wherein the first via and the second via are in direct contact.   
     
     
         2 . The semiconductor structure of  claim 1 , wherein the first via is disposed between the second via and the first conductive pad. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein the second via is in contact with the first bonding layer. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein at least a portion of the first bonding layer is disposed between the first conductive pad and the second via. 
     
     
         5 . The semiconductor structure of  claim 1 , wherein the second contact surface has a circular, quadrilateral or polygonal shape. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein a first width of the first via is substantially less than a second width of the second via. 
     
     
         7 . The semiconductor structure of  claim 6 , wherein the first width of the first via is substantially less than 2 μm. 
     
     
         8 . The semiconductor structure of  claim 6 , wherein the second width of the second via is about 5 μm. 
     
     
         9 . The semiconductor structure of  claim 6 , wherein a width of the first conductive pad is substantially greater than the first width of the first via and the second width of the second via. 
     
     
         10 . The semiconductor structure of  claim 1 , further comprising:
 a first interconnect structure disposed within the first dielectric layer and under the first conductive pad;   a second dielectric layer disposed over the second substrate; and   a second conductive pad disposed over the second via and at least partially exposed through the second dielectric layer.   
     
     
         11 . The semiconductor structure of  claim 10 , wherein the second via is electrically connected to the second conductive pad through a second interconnect structure. 
     
     
         12 . The semiconductor structure of  claim 10 , wherein the first interconnect structure is coupled to the first conductive pad and is electrically connected to the first via.