Resin for sealing semiconductor device, resin-sealed semiconductor device and the method of manufacturing the semiconductor device

Abstract

A resin sealed semiconductor device includes a semiconductor chip having a main surface, a plurality of surface electrodes formed on the main surface of the chip, a plurality of projection electrodes formed the main surface, each projection electrode being connected to respective one surface electrodes, and a resin shield covering the main surface, the surface electrodes and side surfaces of the projection electrodes, the resin having a thermal expansion coefficient in the range of 8-10 ppm/° C. and a Young's modulus in the range of 1.8-2.0 Gpa.

What I claim is:  
     
         1 . A resin for sealing a main surface of a semiconductor chip, for sealing a plurality of surface electrodes which are formed on the main surface, and for sealing a plurality of projection electrodes at their side surfaces, which are connected to the surface electrodes, respectively, the resin having a thermal expansion coefficient in the range of 8-10 ppm/° C., and a Young's modulus of the resin is in the range of 1.8-2.0 Gpa.  
     
     
         2 . A resin as claimed in    claim 1   , comprising: 
 fillers, concentration of the fillers being 86%±1%; and    a curing argent that includes a flexibilizer.    
     
     
         3 . A resin-sealed semiconductor device, comprising: 
 a semiconductor chip having a main surface;    a plurality of surface electrodes formed on the main surface of the chip;    a plurality of projection electrodes formed the main surface, each projection electrode being connected to respective one surface electrode; and    a resin shield covering the main surface, the plurality of surface electrodes and side surfaces of the projection electrodes, the resin having a thermal expansion coefficient in the range of 8-10 ppm/° C. and a Young's modulus in the range of 1.8-2.0 Gpa.    
     
     
         4 . A resin-sealed semiconductor device as claimed in    claim 1   , wherein the resin shield includes fillers, which are 86%±1% concentration, and a curing argent that includes a flexibilizer.  
     
     
         5 . A method of forming a resin-sealed semiconductor device, comprising: 
 preparing a semiconductor wafer having a main surface;    forming surface electrodes and projection electrodes on the main surface;    providing a molding apparatus;    placing the semiconductor wafer in the molding apparatus, and forming a resin shield on the main surface of the semiconductor wafer by injecting a resin material by a transfer molding method until the projection electrodes are covered by the resin material completely, the resin material having a thermal expansion coefficient in the range of 8-10 ppm/° C. and a Young's modulus in the range of 1.8-2.0 Gpa;    polishing the resin shield until a surface of each projection electrode is exposed; and    dicing the semiconductor wafer.    
     
     
         6 . A method of forming a resin-sealed semiconductor device as claimed in    claim 5   , wherein the resin shield includes fillers, which are 86%±1% concentration, and a curing argent that includes a flexibilizer.  
     
     
         7 . A method of forming a resin-sealed semiconductor device as claimed in    claim 5   , wherein the resin material is injected from a location adjacent to a center of the semiconductor wafer.  
     
     
         8 . A method of forming a resin-sealed semiconductor device as claimed in    claim 5   , wherein the molding apparatus includes an upper platen member and a lower platen member, and wherein the molding apparatus further includes an ejecting means in the lower platen member, further comprising ejecting the semiconductor wafer from the molding apparatus using the ejecting means after injection of the resin material is completed.  
     
     
         9 . A method of forming a resin-sealed semiconductor device as claimed in    claim 5   , wherein the molding apparatus includes an upper platen member having a cavity and a lower platen member having a recess which is larger than the cavity, wherein the semiconductor wafer is placed in the recess, and wherein the resin material is injected on the main surface of the semiconductor wafer while a periphery of the semiconductor wafer is clamped by the upper platen member.  
     
     
         10 . A method of forming a resin-sealed semiconductor device as claimed in    claim 9   , further comprising forming a shock-absorbing layer at the periphery of the semiconductor wafer before placing the semiconductor wafer in the recess.  
     
     
         11 . A method of forming a resin-sealed semiconductor device as claimed in    claim 6   , wherein the resin material is injected from a location adjacent to a center of the semiconductor wafer.  
     
     
         12 . A method of forming a resin-sealed semiconductor device as claimed in    claim 6   , wherein the molding apparatus includes an upper platen member and a lower platen member, and wherein the molding apparatus further includes an ejecting means in the lower platen member, further comprising ejecting the semiconductor wafer from the molding apparatus using the ejecting means after injection of the resin material is completed.  
     
     
         13 . A method of forming a resin-sealed semiconductor device as claimed in    claim 6   , wherein the molding apparatus includes an upper platen member having a cavity and a lower platen member having a recess which is larger than the cavity, wherein the semiconductor wafer is placed in the recess, and wherein the resin material is injected on the main surface of the semiconductor wafer while a periphery of the semiconductor wafer is clamped by the upper platen member.  
     
     
         14 . A method of forming a resin-sealed semiconductor device as claimed in    claim 13   , further comprising forming a shock-absorbing layer at the periphery of the semiconductor wafer before placing the semiconductors wafer in the recess.