Method for manufacturing electrode plate having transparent type or reflective type multi-layered conductive film

Abstract

An electrode plate for display device includes a substrate and a multi-layered conductive film. The multi-layered conductive film includes a lower side amorphous oxide layer, a silver-based layer, and an upper side amorphous oxide layer. The lower side amorphous oxide layer and the upper side amorphous oxide layer are formed of an amorphous and amorphous-like material. The film thickness of the upper side amorphous oxide layer is not larger than 20 nm.

1 . An electrode plate for display device comprising: 
 a substrate; and    a multi-layered conductive film, wherein said multi-layered conductive film includes a silver-based layer, a lower side amorphous oxide layer formed of an amorphous or amorphous-like material for suppressing movements of silver atoms at an interface with said silver-based layer, and an upper side amorphous oxide layer formed of an amorphous or amorphous-like material for suppressing movements of silver atoms at an interface with said silver-based layer and at least a film thickness of said upper side amorphous oxide layer is not larger than 20 nm.    
     
     
         2 . The electrode plate for display device according to    claim 1   , wherein said upper side amorphous oxide layer comprises an oxide layer of which optical film thickness defined as a product of a film thickness and a refractive index is not larger than 20 nm.  
     
     
         3 . The electrode plate for display device according to    claim 1   , which further comprises a protection layer formed on said upper side amorphous oxide layer and in which a sum of the optical film thicknesses of said upper side amorphous oxide layer and said protection layer is not less than 70 nm.  
     
     
         4 . The electrode plate for display device according to    claim 1   , further comprising a protection layer formed on said upper side amorphous oxide layer, said protection layer being an oxide layer having a refractive index not larger than that of said upper side amorphous oxide layer.  
     
     
         5 . The electrode plate for display device according to    claim 1   , wherein said lower side amorphous oxide layer has an underlaid layer formed of an oxide layer having a refractive index not larger than that of the lower side amorphous oxide layer.  
     
     
         6 . The electrode plate for display device according to    claim 1   , wherein said lower side amorphous oxide layer is formed of a mixed oxide material which contains cerium oxide as a main material and additionally contains at least one oxide material selected from a group of ytrium oxide, zirconium oxide, niobium oxide, hafnium oxide, tantalum oxide and tungsten oxide.  
     
     
         7 . The electrode plate for display device according to    claim 6   , wherein at least niobium oxide is selected to be added to the cerium oxide which is the main material of said lower side oxide layer.  
     
     
         8 . The electrode plate for display device according to    claim 6   , wherein said lower side amorphous oxide layer formed of an amorphous or amorphous-like material is formed of a mixed oxide which contains at least niobium oxide mixed with cerium oxide.  
     
     
         9 . An electrode plate for display device comprising: 
 a substrate; and    a multi-layered conductive film; wherein said multi-layered conductive film includes a lower side amorphous oxide layer formed of an amorphous or amorphous-like material for suppressing a movement of silver atom at an interface with said silver-based layer, a silver-based layer, and an upper side oxide layer and said upper side oxide layer includes an oxide layer and an amorphous oxide layer formed of an amorphous or amorphous-like material for suppressing a movements of silver atoms at an interface with said silver-based layer and a film thickness of said upper side amorphous oxide layer is not larger than 20 nm.    
     
     
         10 . The electrode plate for display device according to    claim 9   , wherein an optical film thickness defined as a product of the film thickness and a refractive index of said amorphous oxide layer included in said upper side oxide layer is not larger than 20 nm.  
     
     
         11 . The electrode plate for display device according to    claim 9   , which further comprises a protection layer formed on said upper side oxide layer and in which a sum of the optical film thicknesses of said upper side oxide layer and said protection layer is not less than 70 nm.  
     
     
         12 . The electrode plate for display device according to    claim 9   , further comprising a protection layer formed on said upper side oxide layer, said protection layer being an oxide layer having a refractive index not larger than that of said amorphous oxide layer included in said upper side oxide layer.  
     
     
         13 . The electrode plate for display device according to    claim 9   , wherein said lower side amorphous oxide layer has an underlaid layer formed of an oxide material having a refractive index not larger than that of the lower side amorphous oxide layer.  
     
     
         14 . The electrode plate for display device according to    claim 9   , wherein said lower side amorphous oxide layer is formed of a mixed oxide material which contains cerium oxide as a main material and additionally contains at least one oxide material selected from a group of ytrium oxide, zirconium oxide, niobium oxide, hafnium oxide, tantalum oxide and tungsten oxide.  
     
     
         15 . The electrode plate for display device according to    claim 14   , wherein at least niobium oxide is selected to be added to the cerium oxide which is the main material of said lower side amorphous oxide layer.  
     
     
         16 . The electrode plate for display device according to    claim 14   , wherein said lower side amorphous oxide layer formed of an amorphous or amorphous-like materials is formed of a mixed oxide which contains at least niobium oxide mixed with cerium oxide.  
     
     
         17 . The electrode plate for display device according to any one of claims  1 ,  6 ,  9  and  14 , wherein said silver-based layer is a silver alloy containing at least one metal selected from a group of platinum, palladium, gold, copper and nickel added to silver by not larger than 3 at % (atomic percentage).  
     
     
         18 . A method for manufacturing an electrode plate for display device comprising the following steps of: 
 forming a multi-layered conductive film on a substrate, the multi-layered conductive film comprising a lower side amorphous oxide formed of amorphous or an amorphous-like oxide, an upper side amorphous oxide formed of an amorphous or amorphous-like oxide and a silver-based layer which held between the lower side amorphous oxide layer and the upper side amorphous oxide layer, a film thickness of the upper side amorphous oxide layer being not larger than 20 nm;    forming an electrode by patterning the oxide layers together with the silver-based layer; and    forming a protection layer on the electrode, a film thickness of the protection layer being adjusted to attain an optimum optical characteristic as the electrode.    
     
     
         19 . The method for manufacturing the electrode plate for display device according to    claim 18   , wherein said step of forming the protection layer comprises a step of forming the protection layer formed of an electrically insulating material on the electrode with a sufficiently large film thickness for protection in a portion other than an electrical connection portion of the electrode.  
     
     
         20 . The method for manufacturing the electrode plate for display device according to    claim 18   , wherein said electrode forming step uses a,photolithography method using a photoresist, the photoresist of the electrode portion for electrical connection is left behind when the photoresist is selectively removed after the electrode pattern is formed by use of the process of the photolithography method, the photoresist left behind is used as mask for forming the protection layer, and then the photoresist is removed to expose the electrode portion for electrical connection from the protection layer.  
     
     
         21 . The method for manufacturing the electrode plate for display device according to    claim 18   , wherein said pattern processing step of effecting the patterning process is a mask sputtering method.  
     
     
         22 . A method for manufacturing an electrode plate for display device comprising the following steps: 
 forming a lower amorphous oxide layer formed of an amorphous or amorphous-like material;    forming a silver-based layer on the lower oxide layer; and    forming an upper amorphous oxide layer formed of an amorphous or amorphous-like material and having a film thickness not larger than  20  nm on the silver-based layer.