Device for producing and processing semiconductor substrates

Abstract

The device for producing and processing silicon carbide semiconductor substrates at a high temperature has a susceptor, on which the semiconductor substrates rest, so that there is good thermal contact between the semiconductor substrates and the susceptor. To ensure that there is no contamination of the component during the production process, the surface of the susceptor is covered with cover plates each formed with a cutout for a semiconductor substrate. The surface of the susceptor is substantially completely covered by the cover plates and the semiconductor substrates.

We claim:  
     
         1 . A device for producing and processing SiC semiconductor substrates at elevated temperatures, comprising: 
 a susceptor having a support surface configured to support semiconductor substrates, and ensuring good thermal contact between said support surface and the semiconductor substrates;    a plurality of cover plates directly covering said support surface of said susceptor and each having a cutout formed therein for receiving a respective semiconductor substrate;    said cover plates and the semiconductor substrates substantially completely covering said support surface of said susceptor and ensuring good conduction of heat between said susceptor and said cover plates.    
     
     
         2 . The device according to    claim 1   , wherein said cover plates are spaced a distance of less than 0.5 mm from one another and from the respective semiconductor substrate.  
     
     
         3 . The device according to    claim 1   , wherein said cover plates consist of polycrystalline SiC.  
     
     
         4 . The device according to    claim 1   , wherein said cover plates consist of metal carbide.