Apparatus and methods for chemical-mechanical polishing of semiconductor wafers

Abstract

An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution which may be recirculated, analyzed, adjusted, and from which soluble reaction products may be removed.

29 . A polishing pad for polishing a surface of a semiconductor comprising a polishing surface having a multiplicity of nanoasperities, which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10%, in the polishing surface.  
     
     
         30 . The polishing pad according to claim  29  wherein said nanoasperities do not permanently deform during contact with said semiconductor wafer.  
     
     
         31 . The polishing pad according to claim  29  wherein said nanoasperities are regenerated periodically by pad conditioning.  
     
     
         32 . The polishing pad according to claim  29  wherein the polishing pad is a polymer sheet containing solid particles.  
     
     
         33 . The polishing pad according to claim  29  wherein the polishing pad comprises multiple layers of materials, one of the layers includes the polishing surface, and the one layer is a polymer impregnated fiber matrix.  
     
     
         34 . The polishing pad according to claim  29  wherein the polishing pad comprises multiple layers of materials, one of the layers includes the polishing surface, and the one layer is a polymer sheet containing void spaces.  
     
     
         35 . The polishing pad according to claim  29  wherein the polishing pad comprises multiple layers of materials, one of the layers includes the polishing surface, and the one layer is a polymer sheet containing solid particles.  
     
     
         36 . The polishing pad according to claim  29  wherein the polishing surface has a macrotexture that facilitates liquid transport across the surface of the semiconductor during polishing.  
     
     
         37 . The polishing pad according to claim  29  wherein the polishing surface comprises a plurality of particle clusters held by a polishing layer, said particle clusters containing a high modulus phase material and a different material that provides a phase which is separate and distinct from the high modulus phase, said particle clusters having an average size in the range of 1 to 50 microns.  
     
     
         38 . The polishing pad according to  claim 37  wherein the particle clusters have an average size in the range of 5 to 10 microns.