US2002027289A1PendingUtilityA1

Semiconductor device with an improved bonding pad structure and method of bonding bonding wires to bonding pads

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Priority: Sep 1, 2000Filed: Aug 30, 2001Published: Mar 7, 2002
Est. expirySep 1, 2020(expired)· nominal 20-yr term from priority
Inventors:Toshimichi KuriharaTetsu TodaShigeki Tsubaki
H10W 90/756H10W 90/754H10W 72/07555H10W 72/07533H10W 72/07532H10W 72/07521H10W 72/07141H10W 72/5528H10W 72/5524H10W 72/5522H10W 72/5363H10W 72/983H10W 72/952H10W 72/934H10W 72/923H10W 72/536H10W 72/59H10W 20/40H10W 72/019H10W 72/071B82Y 30/00
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Claims

Abstract

The present invention provides a bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: 
 a base layer;    at least a barrier layer overlying said base layer; and    a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and    wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.    
     
     
         2 . The bonding structure as claimed in  claim 1 , wherein a bottom portion of said Au—Al alloy layer under a bottom of said bonding portion is thinner than side portions of said Au—Al alloy layer adjacent to side portions of said bonding portion.  
     
     
         3 . The bonding structure as claimed in  claim 1 , wherein said at least barrier layer includes at least one of Ti, W, Pt, Ta, Ni, and alloys thereof.  
     
     
         4 . The bonding structure as claimed in  claim 1 , wherein said at least barrier layer has a thickness of at least 200 nanometers.  
     
     
         5 . The bonding structure as claimed in  claim 1 , wherein said at least barrier layer comprises a bottom barrier layer made of Ti and a top barrier layer made of TiN.  
     
     
         6 . The bonding structure as claimed in  claim 5 , wherein said bottom barrier layer and said top barrier layer have respective thicknesses which are at least 100 nanometers.  
     
     
         7 . The bonding structure as claimed in  claim 1 , wherein said bonding layer has a thickness of at most 600 nanometers.  
     
     
         8 . A bonding pad comprising: 
 a base layer;    at least a barrier layer overlying said base layer; and    a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and    wherein said at least barrier layer comprises a martial which suppresses a formation of an Al—Au alloy.    
     
     
         9 . The bonding structure as claimed in  claim 8 , wherein said at least barrier layer includes at least one of Ti, W, Pt, Ta, Ni, and alloys thereof.  
     
     
         10 . The bonding structure as claimed in  claim 8 , wherein said at least barrier layer has a thickness of at least 200 nanometers.  
     
     
         11 . The bonding structure as claimed in  claim 8 , wherein said at least barrier layer comprises a bottom barrier layer made of Ti and a top barrier layer made of TiN.  
     
     
         12 . The bonding structure as claimed in  claim 11 , wherein said bottom barrier layer and said top barrier layer have respective thicknesses which are at least 100 nanometers.  
     
     
         13 . The bonding structure as claimed in  claim 8 , wherein said bonding layer has a thickness of at most 600 nanometers.  
     
     
         14 . A semiconductor device having at least a bonding pad which is bonded through a bonding wire of an Au-base material to a lead frame of a printed circuit board, on which said semiconductor device is mounted, 
 wherein said bonding pad further comprises:    a base layer;    at least a barrier layer overlying said base layer; and    a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and    wherein a bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.    
     
     
         15 . The semiconductor device as claimed in  claim 14 , wherein a bottom portion of said Au—Al alloy layer under a bottom of said bonding portion is thinner than side portions of said Au—Al alloy layer adjacent to side portions of said bonding portion.  
     
     
         16 . The semiconductor device as claimed in  claim 14 , wherein said at least barrier layer includes at least one of Ti, W, Pt, Ta, Ni, and alloys thereof.  
     
     
         17 . The semiconductor device as claimed in  claim 14 , wherein said at least barrier layer has a thickness of at least 200 nanometers.  
     
     
         18 . The semiconductor device as claimed in  claim 14 , wherein said at least barrier layer comprises a bottom barrier layer made of Ti and a top barrier layer made of TiN.  
     
     
         19 . The semiconductor device as claimed in  claim 18 , wherein said bottom barrier layer and said top barrier layer have respective thicknesses which are at least 100 nanometers.  
     
     
         20 . The semiconductor device as claimed in  claim 14 , wherein said bonding layer has a thickness of at most 600 nanometers.  
     
     
         21 . A method of bonding a bonding portion of a bonding wire made of an Au-base material to a bonding pad, said bonding pad further comprising: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, 
 said method comprising the step of: 
 placing said bonding portion of said bonding wire over said bonding pad; and  
 carrying out a thermal compression bonding, so that said bonding portion of said bonding wire is buried in said bonding layer, and an Au—Al alloy layer is formed on an interface between said bonding portion and said bonding layer,  
 wherein a bottom of said Au—Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.  
   
     
     
         22 . The method as claimed in  claim 21 , wherein a bottom portion of said Au—Al alloy layer under a bottom of said bonding portion is thinner than side portions of said Au—Al alloy layer adjacent to side portions of said bonding portion.  
     
     
         23 . The method as claimed in  claim 21 , wherein said at least barrier layer includes at least one of Ti, W, Pt, Ta, Ni, and alloys thereof.  
     
     
         24 . The method as claimed in  claim 21 , wherein said at least barrier layer has a thickness of at least 200 nanometers.  
     
     
         25 . The method as claimed in  claim 21 , wherein said at least barrier layer comprises a bottom barrier layer made of Ti and a top barrier layer made of TiN.  
     
     
         26 . The method as claimed in  claim 25 , wherein said bottom barrier layer and said top barrier layer have respective thicknesses which are at least 100 nanometers.  
     
     
         27 . The method as claimed in  claim 21 , wherein said bonding layer has a thickness of at most 600 nanometers.

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