Dual damascene interconnect structure using low stress flourosilicate insulator with copper conductors

Abstract

A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, h i ; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height h f .

What is claimed:  
     
         1 . A metallization insulating structure, comprising: 
 a substrate;    a substantially fluorine free insulating layer formed on the substrate, having a height, h i ;    a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height h f .    
     
     
         2 . The insulating structure according to  claim 1  further comprising a capping layer formed on the fluorine containing insulating layer.  
     
     
         3 . The insulating structure according to  claim 2  wherein the fluorine containing insulating layer comprises a material selected from the group consisting of fluorinated silicon oxide, fluorinated amorphous carbon, fluorinated diamondlike carbon and fluorinated organic polymers.  
     
     
         4 . The insulating structure according to  claim 2  wherein the substantially free insulating layer comprises undoped silicon glass.  
     
     
         5 . The insulating structure according to  claim 1  further comprising a capping layer formed prior on the substrate prior to the substantially fluorine free insulating layer.  
     
     
         6 . The insulating structure according to  claim 5  wherein the capping layer comprises a material selected from the group consisting of silicon nitride, silicon carbide and hydrogenated silicon carbide, or combinations thereof.  
     
     
         7 . The insulating structure according to  claim 5  wherein the substantially free insulating layer comprises undoped silicon glass.  
     
     
         8 . The insulating structure according to  claim 5  wherein the fluorine containing insulating layer comprises a material selected from the group consisting of fluorinated silicon oxide, fluorinated amorphous carbon, fluorinated diamondlike carbon and fluorinated organic polymers.  
     
     
         9 . A metallization structure, comprising: 
 a substrate;    a substantially fluorine free insulating layer formed on the substrate, having a height, h i ;    a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height h f ;    a patterned metal structure, the metal structure having sidewalls and a bottom, the bottom of the metal structure in contact with the substrate and the sidewalls of the metal structure in contact with the substantially fluorine free insulating layer and the fluorine containing insulating layer.    
     
     
         10 . The metallization structure according to  claim 9  wherein the patterned metal structure comprises at least two portions, each portion having a height.  
     
     
         11 . The metallization according to  claim 10  wherein the height of one of the at least two portions is greater than the height of the substantially fluorine free layer.  
     
     
         12 . The metallization according to  claim 10  wherein the height of one of the at least two portions is less than the height of the fluorine containing layer.  
     
     
         13 . The metallization according to  claim 11  wherein the height of one of the at least two portions is less than the height of the fluorine containing layer.  
     
     
         14 . The metallization according to  claim 13  wherein the portion with the height less than the height of the fluorine containing layer is a line.  
     
     
         15 . The metallization according to  claim 14  wherein the portion with the height greater than the height of the substantially fluorine free layer is a via.  
     
     
         16 . A method of forming a metallization insulating structure, comprising the following steps: 
 depositing a substantially fluorine free insulating layer on a preexisting substrate, having a height, h i ; and    forming a fluorine containing insulating layer on the substantially fluorine free insulating layer, having a height h f .    
     
     
         17 . The method according to  claim 16  further comprising the steps of patterning the layer and depositing a metal.  
     
     
         18 . The method according to  claim 17  wherein the patterning comprises at least two portions, each portion having a height.  
     
     
         19 . The method according to  claim 18  wherein the height of one of the at least two portions is greater than height of the substantially fluorine free insulating layer and the height of the other of the at least two portions is less than the height of the fluorine containing insulating layer.