Silicon single crystal, silicon wafer, and epitaxial wafer

Abstract

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×10 13 atoms/cm 3 or more, or with nitrogen doping at a concentration of 1×10 12 atoms/cm 3 and carbon doping at a concentration of 0.1×10 16 −5×10 16 atoms/cm 3 and/or boron doping at a concentration of 1×10 17 atoms/cm 3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.

1 . A silicon single crystal suitable for production of an epitaxial wafer characterized in that the single crystal is grown with nitrogen doping at a concentration of 1×10 13  atoms/cm 3  or more.  
     
     
         2 . A silicon wafer, which is produced by slicing a silicon single crystal as described in  claim 1 .  
     
     
         3 . An epitaxial wafer in which an epitaxial layer is grown on a surface of a silicon wafer as described in  claim 2 .  
     
     
         4 . An epitaxial wafer according to  claim 3 , which has an oxygen concentration of 12×10 17  atoms/cm 3  or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.  
     
     
         5 . A silicon single crystal suitable for production of an epitaxial wafer characterized in that the single crystal is grown with nitrogen doping at a concentration of 1×10 12  atoms/cm 3  or more and carbon doping at a concentration of 0.1×10 16 -5×10 16  atoms/cm 3 .  
     
     
         6 . A silicon wafer, which is produced by slicing a silicon single crystal as described in  claim 5 .  
     
     
         7 . An epitaxial wafer in which an epitaxial layer is grown on a surface of a silicon wafer as described in  claim 6 .  
     
     
         8 . An epitaxial wafer according to  claim 7 , which has an oxygen concentration of 12×10 17  atoms/cm 3  or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.  
     
     
         9 . A silicon single crystal suitable for production of an epitaxial wafer characterized in that the single crystal is grown with nitrogen doping at a concentration of 1×10 12  atoms/cm 3  or more and boron doping at a concentration of 1×10 17  atoms/cm 3  or more.  
     
     
         10 . A silicon wafer, which is produced by slicing a silicon single crystal as described in  claim 9 .  
     
     
         11 . An epitaxial wafer in which an epitaxial layer is grown on a surface of a silicon wafer as described in  claim 10 .  
     
     
         12 . An epitaxial wafer according to  claim 11 , which has an oxygen concentration of 12×10 17  atoms/cm 3  or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.  
     
     
         13 . A silicon single crystal suitable for production of an epitaxial wafer characterized in that the single crystal is grown with nitrogen doping at a concentration of 1×10 12  atoms/cm 3  or more, carbon doping at a concentration of 0.1×10 16 -5×10 16  atoms/cm 3 , and boron doping at a concentration of 1×10 17  atoms/cm 3  or more.  
     
     
         14 . A silicon wafer, which is produced by slicing a silicon single crystal as described in  claim 13 .  
     
     
         15 . An epitaxial wafer in which an epitaxial layer is grown on a surface of a silicon wafer as described in  claim 14 .  
     
     
         16 . An epitaxial wafer according to  claim 11 , which has an oxygen concentration of 12×10 17  atoms/cm 3  or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.  
     
     
         17 . An epitaxial wafer in which an epitaxial layer is grown on a surface of a single crystal wafer which is sliced from a silicon single crystal grown accompanied by nitrogen doping and generates oxidation-induced stacking faults at a density of 1×10 2 /cm 2  or more through a thermal oxidation treatment.  
     
     
         18 . An epitaxial wafer in which an epitaxial layer is grown on a surface of a single crystal wafer which is sliced from a silicon single crystal grown accompanied by nitrogen doping and generates defects at a density of 5×10 4 /cm 2  or more, as measured in the cross section thereof, through a thermal treatment of 1000° C. or more.  
     
     
         19 . An epitaxial wafer in which an epitaxial layer is grown on a silicon wafer which is sliced from a silicon single crystal grown accompanied by nitrogen doping at a concentration of 1×10 12  atoms/cm 3  or more when the epitaxial layer is subjected to a high-temperature device process carried out at a temperature substantially higher than 800° C. after epitaxial growth.  
     
     
         20 . An epitaxial wafer produced by growing an epitaxial layer on a surface of a nitrogen-doped wafer, which epitaxial wafer allows to generate defects at a density of 1×10 4 /cm 2  or more, as measured in the cross section thereof, through a thermal treatment of 1000° C. or more.