Resistor foil

Abstract

A resistor foil comprised of a layer of copper foil and a coating of an organic molecular semiconductor material on one side of the copper foil.

Having described the invention, the following is claimed:  
     
         1 . A resistor foil, comprised of: 
 a layer of copper foil; and    a coating of an organic molecular semiconductor material on one side of said copper foil.    
     
     
         2 . A resistor foil as defined in  claim 1 , wherein said copper foil is an electrodeposited copper foil.  
     
     
         3 . A resistor foil as defined in  claim 2 , wherein said organic molecular semiconductor material is vacuum deposited onto said copper foil.  
     
     
         4 . A resistor foil as defined in  claim 3 , wherein said organic molecular semiconductor material has a thickness between 3 Å and 1,000 Å.  
     
     
         5 . A resistor foil as defined in  claim 4 , wherein said organic molecular semiconductor material has a thickness between 50 Å and 200 Å.  
     
     
         6 . A resistor foil as defined in  claim 1 , wherein said organic molecular semiconductor material is a metallo-organic.  
     
     
         7 . A resistor foil as defined in  claim 6 , wherein said organic molecular semiconductor material is a metallo-organic selected from the group consisting of porphyrins, metal-cyano complexes (Pt, Ir and Rh), merocyanines.  
     
     
         8 . A resistor foil as defined in  claim 1 , wherein said organic molecular semiconductor material is an aromatic hydrocarbon.  
     
     
         9 . A resistor foil as defined in  claim 8 , wherein said organic molecular semiconductor material is an aromatic hydrocarbon selected from the group consisting of naphthalene, anthracene, tetracene, pentacene, hexacene, perylene, phenanthrene, chrysene, triphenylene, pyrene, benzopyrene, violanthrene, coronene, ovalene, graphite and highly oriented pyrolytic graphite (HOPG).  
     
     
         10 . A resistor foil as defined in  claim 1 , wherein said organic molecular semiconductor material is a metallopthalocyanine.  
     
     
         11 . A resistor foil as defined in  claim 10 , wherein said organic molecular semiconductor material is a metallopthalocyanine selected from the group consisting of hydrogen based phythalocyanines, as well as metal based phythalocyanines that include the following metals: lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), aluminum (Al), silicon (Si), phosphorus (P), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), antimony (Sb), barium (Ba), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), thallium (Tl), lead (Pb), thorium (Th), protactinium (Pa), uranium (U), neptunium (Np), plutonium (Pu), americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es) fermium (fm), mendelevium (Md), nobelium (No) and lawrencium (Lw).  
     
     
         12 . A resistor foil as defined in  claim 1 , wherein said organic molecular semiconductor material is a polymer.  
     
     
         13 . A resistor foil as defined in  claim 12 , wherein said organic molecular semiconductor material is a polymer selected from the group consisting of poly n-vinylcarbozole, polyethylene, polyacetylene, polyphenylene, polyphenylacetylene, polypyrrole, polyacrylonitrile, pyrolyzed polymers (polyacrylonitrile, polyimide, polyvinylmethylketone, polydivinylbenzene, polyvinylidene chrloride) polymethine dyes, polysulfurnitride, polydiacetylene.  
     
     
         14 . A resistor foil as defined in  claim 1 , wherein said organic molecular semiconductor material is a charge transfer compound.  
     
     
         15 . A resistor foil as defined in  claim 14 , wherein said organic molecular semiconductor material is a charge transfer compound selected from the group consisting of hydrogen based phythalocyanines, as well as metal based phythalocyanines that include combinations of: n-ethylcarbazole, hexamethylbenzene (HMB), tetramethyl-p-phenylene diamine (TMPD), tetrathiotetracene (TTT), tetrathiofulvalene (TTF), tetraselenofulvalene (TSeF), tetramethylthiofulvalene (TMTTF), alkali metals, triethylammonium (TEA), n-methylpyridinium (NMPy), n-methylquinolinium (NMQn), n-methylacridinium (NMAd), trinitrofluorenone (TNF), tetracyanoquinodimethane (TCNQ), 11,11,12,12-tetracyano-naphtho-2,6-quinodimethane (TNAP), tetracyanoethylene (TCNE), tetracyanobenzene, p-chloranil, 2,3-dichloro-5,6-dicyano benzoquinone (DDQ).  
     
     
         16 . A resistor foil as defined in  claim 14 , wherein said charge transfer compound is a combination of at least two compounds selected from the group consisting of: n-ethylcarbazole, hexamethylbenzene (HMB), tetramethyl-p-phenylene diamine (TMPD), tetrathiotetracene (TTT), tetrathiofulvalene (TTF), tetraselenofulvalene (TSeF), tetramethylthiofulvalene (TMTTF), alkali metals, triethylammonium (TEA), n-methylpyridinium (NMPy), n-methylquinolinium (NMQn), n-methylacridinium (NMAd), trinitrofluorenone (TNF), tetracyanoquinodimethane (TCNQ), 11,11,12,12-tetracyano-naphtho-2,6-quinodimethane (TNAP), tetracyanoethylene (TCNE), tetracyanobenzene, p-chloranil, 2,3-dichloro-5,6-dicyano benzoquinone (DDQ).