US2002173235A1PendingUtilityA1
Methods for break-in and conditioning a fixed abrasive polishing pad
Priority: Jan 4, 2000Filed: Mar 29, 2002Published: Nov 21, 2002
Est. expiryJan 4, 2020(expired)· nominal 20-yr term from priority
B24B 37/042B24B 53/017
36
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Claims
Abstract
The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP). The present invention also relates to a method of determining the wear rate of a fixed abrasive polishing pad.
Claims
exact text as granted — not AI-modifiedWhat is claimed:
1 . A method of conditioning a fixed abrasive polishing pad, comprising:
a. providing a fixed abrasive polishing pad; b. providing a conditioning element, wherein the element, comprises: an upper surface and a lower conditioning surface, comprising: abrasive particles; c. contacting the polishing pad and conditioning element; wherein one or both of the pad and conditioning element are in motion relative to the other.
2 . A method according to claim 1 , wherein the abrasive particles are diamond particles with a diameter of from 5 to 50 microns and the density of the particles present on the conditioning surface is from about 5 to 100 particles/mm 2 of the surface.
3 . A method according to claim 2 , wherein the conditioning element is a disk or a ring, the abrasive particles have a diameter of from 1 to 50 microns, and the density of the particles present on the conditioning surface is from about 20 to 80 particles/mm 2 of the surface.
4 . A method according to claim 3 , wherein the conditioning element is a disk, the abrasive particles have a diameter of about 35 microns, and the density of the particles present on the conditioning surface is about 50 particles/mm 2 of the surface.
5 . A method according to claim 1 , wherein a down force is applied to the conditioning element and the down force is about 0.5 to 6 lbs.
6 . A method according to claim 5 , wherein the down force is about 1 to 4 lbs.
7 . A method according to claim 6 , wherein the down force is about 2 lbs.
8 . A method according to claim 1 , wherein the conditioning is to break-in the polishing pad and the conditioning element is swept uni-directionally across the pad 1 to 50 times.
9 . A method according to claim 8 , wherein the conditioning element is swept uni-directionally across the pad 1 to 10 times.
10 . A method according to claim 8 , wherein the conditioning element is swept uni-directionally across the pad until surface temperature of polishing pad during polishing is stable from run to run and within preset temperature limits is achieved during the polishing process.
11 . A method according to claim 1 , wherein the conditioning is to recondition the polishing pad and the conditioning element is swept uni-directionally across the pad 1 to 10 times.
12 . A method according to claim 11 , wherein the conditioning element is swept uni-directionally across the pad 1 to 5 times.
13 . A method according to claim 11 , wherein the conditioning element is swept uni-directionally across the pad until surface temperature of polishing pad during polishing is stable from run to run and within preset temperature limits is achieved during the polishing process.
14 . A method according to claim 1 , wherein from 0.2 to 3.0 microns of polishing pad are removed by the conditioning element.
15 . A method according to claim 14 , wherein from 1.5 to 3.0 microns of polishing pad are removed by the conditioning element.
16 . A method according to claim 1 , wherein:
the conditioning element is a disk, the abrasive particles are diamond particles with a diameter of about 35 microns, and the density of the particles present on the conditioning surface is about 50 particles/mm 2 of the surface; a down force is applied to the conditioning element and the down force is about 2 lbs; the conditioning is to recondition the polishing pad and the conditioning element is swept uni-directionally across the pad 1 to 5 times; and, from 1.5 to 3.0 microns of the polishing pad are removed by the conditioning element.
17 . A method according to claim 1 , wherein the fixed abrasive polishing pad has a surface roughness of about 0.5 to 1.0 μm after contact with the conditioning element.
18 . A method according to claim 1 , wherein the fixed abrasive polishing pad has a Peak-Valley distance of about 1 to 20 μm after contact with the conditioning element.Cited by (0)
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