Photoresist with adjustable polarized light reaction and photolithography process using the photoresist

Abstract

A photoresist with adjustable polarized light response and a photolithography process using the photoresist. The photoresist and the photolithography process are suitable for use in an exposure optical system with a high numerical aperture. The photoresist includes a photosensitive polymer that can absorb the exposure light source to generate an optical reaction. The photosensitive polymer can also be oriented along a direction of an electric field or a magnetic field. The response for the photosensitive upon a polarized light is determined by an angle between the predetermined direction and the polarized light. In addition, the photolithography process adjusts the orientation of the photosensitive polymer, so that the P-polarized light has a weaker response than that of the S-polarized light to compensate for the larger transmission coefficient of the P-polarized light with a high numerical aperture, so as to prevent the photoresist pattern deformation.

What is claimed is:  
     
         1 . A photoresist with an adjustable polarized light response suitable for use in a photolithography process, the photoresist comprising a photosensitive polymer, wherein: 
 the photosensitive polymer absorbs an exposure light source to generate an optical reaction in the photolithography process;    the photosensitive polymer is oriented to a specific direction by a physical method; and    the photosensitive polymer has a response to a polarized light, wherein the response varies as an angle between the specific direction and a polarization direction of the polarized light changes.    
     
     
         2 . The photoresist according to  claim 1 , wherein the linear photosensitive polymer includes a linear photosensitive polymer.  
     
     
         3 . The photoresist according to  claim 2 , wherein when a direction of the linear photosensitive polymer is parallel to the polarization direction of the polarized light, the liner photosensitive polymer has a maximum polarized light response, and when the direction of the linear photosensitive polymer is perpendicular to the polarization direction of the polarized light, the liner photosensitive polymer has a minimum polarized light response.  
     
     
         4 . The photoresist according to  claim 2 , wherein the linear photosensitive polymer comprises a photosensitive section and an anti-etching section.  
     
     
         5 . The photoresist according to  claim 4 , wherein the photosensitive section includes a PMDA.  
     
     
         6 . The photoresist according to  claim 4 , wherein the photosensitive section has a molecule weight of 10 2 ˜10 8 .  
     
     
         7 . The photoresist according to  claim 4 , wherein the anti-etching section includes ODA.  
     
     
         8 . The photoresist according to  claim 4 , wherein the photosensitive section has a molecule weight as 10 2 ˜10 8 .  
     
     
         9 . The photoresist according to  claim 1 , wherein the physical method includes applying an electric field when the photosensitive polymer has electric dipoles.  
     
     
         10 . The photoresist according to  claim 9 , wherein applying an electric field includes using a plasma.  
     
     
         11 . The photoresist according to  claim 9 , wherein applying an electric field includes using a polarized ultra-violet light.  
     
     
         12 . The photoresist according to  claim 9 , wherein applying an electric field includes using a microwave.  
     
     
         13 . The photoresist according to  claim 1 , wherein the physical method includes applying a magnetic field when the photosensitive polymer has magnetic dipoles.  
     
     
         14 . The photoresist according to  claim 9 , wherein applying a magnetic field includes using a plasma.  
     
     
         15 . A photolithography process applying to a substrate, comprising: 
 providing a photoresist layer that includes a photosensitive polymer, which absorbs an exposure light source to generate an optical reaction, and is oriented to a specific o direction by a physical method, a specific direction being variable as an angle between the specific direction and a polarization direction of a polarized light changes;    providing the exposure light source with a P-polarized light and an S-polarized light perpendicular to each other, the P-polarized light having a transmission coefficient larger than that of the S-polarized light;    forming the photoresist layer on the substrate of which the specific direction of the photosensitive polymer has a response to the P-polarized light smaller than a response to the S-polarized light to compensate for the difference of transmission coefficients, such that the optical reaction amount of the P-polarized light is about the same of the optical reaction amount;    using the exposure light source and a photomask to expose the photoresist layer; and    developing the photoresist layer.    
     
     
         16 . The photolithography process according to  claim 15 , wherein the photosensitive polymer comprises a linear photosensitive polymer.  
     
     
         17 . The photolithography process according to  claim 16 , wherein when a direction of the linear photosensitive polymer is parallel to the polarization direction of the polarized light, the liner photosensitive polymer has a maximum response to the polarized light, and when the direction of the linear photosensitive polymer is perpendicular to the polarization direction of the polarized light, the liner photosensitive polymer has a minimum response to the polarized light.  
     
     
         18 . The photolithography process according to  claim 16 , wherein the linear photosensitive polymer comprises a photosensitive section and an anti-etching section.  
     
     
         19 . The photolithography process according to  claim 18 , wherein the photosensitive section includes a PMDA.  
     
     
         20 . The photolithography process according to  claim 18 , wherein the photosensitive section has a molecule weight as 10 2 ˜10 8 .  
     
     
         21 . The photolithography process according to  claim 1   8 , wherein the anti-etching section includes ODA.  
     
     
         22 . The photolithography process according to  claim 18 , wherein the photosensitive section has a molecule weight as 10 2 ˜10 8 .  
     
     
         23 . The photolithography process according to  claim 15 , wherein the physical method includes applying an electric field when the photosensitive polymer has electric dipoles.  
     
     
         24 . The photolithography process according to  claim 23 , wherein applying an electric field includes using a plasma.  
     
     
         25 . The photoresist according to  claim 23 , wherein applying an electric field includes using a polarized ultra-violet light.  
     
     
         26 . The photoresist according to  claim 23 , wherein applying an electric field includes using a microwave.  
     
     
         27 . The photolithography process according to  claim 15 , wherein the physical method includes applying a magnetic field when the photosensitive polymer has magnetic dipoles.  
     
     
         28 . The photolithography process according to  claim 27 , wherein applying a magnetic field includes using a plasma.  
     
     
         29 . The photolithography process according to  claim 15 , wherein forming the photoresist layer on the substrate includes a step of spin coating.  
     
     
         30 . The photolithography process according to  claim 15 , wherein forming the photoresist layer on the substrate includes vapor deposition.