Polishing assistant apparatus of polishing assistant system

Abstract

A polishing assistant system applied to a polished wafer polished by a chemical mechanical polishing (CMP) is disclosed. The polishing assistant system includes a monitoring device for detecting a first polishing parameter of the polished wafer, and a polishing assistant apparatus. The polishing assistant apparatus further includes a platen for placing the polished wafer, a liquid supplier for supplying a slurry, a polishing controller for receiving the first polishing parameter and outputting a first control signal which is relative to a certain region of the polished wafer in response to the first polishing parameter, and a polish head electrically connected to the polishing controller and polishing the certain region of the polished wafer in response to the first control signal.

What is claimed is:  
     
         1 . A polishing assistant system applied to a polished wafer polished by a chemical mechanical polishing (CMP), comprising: 
 a monitoring device for detecting a first polishing parameter of said polished wafer; and    a polishing assistant apparatus further comprising: 
 a platen for placing said polished wafer;  
 a liquid supplier for supplying a slurry;  
 a polishing controller for receiving said first polishing parameter and outputting a first control signal which is relative to a certain region of said polished wafer in response to said first polishing parameter; and  
 a polish head electrically connected to said polishing controller and polishing said certain region of said polished wafer in response to said first control signal.  
   
     
     
         2 . The polishing assistant system according to  claim 1  wherein said monitoring device further detects a second, a third, and a fourth polishing parameters.  
     
     
         3 . The polishing assistant system according to  claim 2  wherein said second, third, and fourth polishing parameters are a polish head down force, a polish head rotation speed, and a polishing time, respectively.  
     
     
         4 . The polishing assistant system according to  claim 3  wherein in response to said second, third, and fourth polishing parameters, said polishing controller outputs a second, third, and fourth control signals, respectively, and said polish head polishes said certain region of said polished wafer in response to said second, third, and fourth control signals, respectively.  
     
     
         5 . The polishing assistant system according to  claim 3  wherein said polishing controller comprises: 
 a pressure controlling unit for controlling a pressure when said polish head polishing in response to said second polishing parameter; and  
 a movable arm electrically connected to said pressure controlling unit and carrying said polish head to move to said certain region of said polished wafer in response to said first polishing parameter.  
 
     
     
         6 . The polishing assistant system according to  claim 5  wherein said pressure controlling unit has a control pressure ranged from 0.1 to 10 psi.  
     
     
         7 . The polishing assistant system according to  claim 5  wherein said movable arm has an internal channel communicating between said pressure controlling unit and said polish head.  
     
     
         8 . The polishing assistant system according to  claim 7  wherein said internal channel is poured thereinto a medium and said control pressure is achieved by pressurizing said medium.  
     
     
         9 . The polishing assistant system according to  claim 8  wherein said medium is one of a liquid oil and a gas.  
     
     
         10 .The polishing assistant system according to  claim 1  wherein said monitoring device further comprises: 
 a detector for detecting a surface of said polished wafer to obtain a data; and  
 a server electrically connected to said detector, obtaining said first polishing parameter according to said data, and transmitting said first polishing parameter to said polishing controller.  
 
     
     
         11 . The polishing assistant system according to  claim 1  wherein said platen is a rotating platen.  
     
     
         12 . The polishing assistant system according to  claim 1  wherein said rotating platen has a rotation speed ranged from 1 to 50 revolutions per minute (rpm).  
     
     
         13 . The polishing assistant system according to  claim 1  wherein said polish head is made of polyvinyl alcohol (PVA).  
     
     
         14 . The polishing assistant system according to  claim 1  wherein said polish head is a rotatable polish head.  
     
     
         15 . The polishing assistant system according to  claim 14  wherein said polish head has a diameter ranged from 1 to 3 cm.  
     
     
         16 . The polishing assistant system according to  claim 15  wherein said polish head has a rotation speed ranged from 1 to 50 rpm.  
     
     
         17 . The polishing assistant system according to  claim 1  further comprising a polish head film disposed between said platen and said polished wafer for protecting said polished wafer.  
     
     
         18 . A polishing assistant system applied to a polished wafer polished by a chemical mechanical polishing (CMP), comprising: 
 a monitoring device for detecting a first polishing parameter of said polished wafer; and    a polishing assistant apparatus further comprising: 
 a platen for placing said polished wafer;  
 a liquid supplier for supplying a slurry; and  
 a polishing device polishing a certain region of said polished wafer in response to said first polishing parameter.  
   
     
     
         19 . The polishing assistant system according to  claim 18  wherein said monitoring device further detects a second, a third, and a fourth polishing parameters, and said second, third, and fourth polishing parameters are a polish head down force, a polish head rotation speed, and a polishing time, respectively.  
     
     
         20 . The polishing assistant system according to  claim 19  wherein said polishing device comprises: 
 a polishing controller for receiving said first, second, third and fourth polishing parameters and outputting a first, second, third and fourth control signals in response to said first, second, third and fourth polishing parameters, respectively; and  
 a polish head electrically connected to said polishing controller and polishing said certain region of said polished wafer in response to said first, second, third, and fourth control signals.  
 
     
     
         21 . The polishing assistant system according to  claim 20  wherein said polishing controller comprises: 
 a pressure controlling unit for controlling a pressure when said polish head is polishing in response to said second polishing parameter; and  
 a movable arm electrically connected to said pressure controlling unit and carrying said polish head to move to said certain region of said polished wafer in response to said first polishing parameter.