US2003024646A1PendingUtilityA1

Plasma etching apparatus and plasma etching method

Priority: Mar 16, 1995Filed: Sep 25, 2002Published: Feb 6, 2003
Est. expiryMar 16, 2015(expired)· nominal 20-yr term from priority
H10P 72/0434H10P 72/0421H10P 72/72H10P 50/242H01J 37/32522H01J 2237/022H01J 37/32504
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Claims

Abstract

A plasma etching apparatus for etching of a sample having an etching chamber having an upper wall and a sidewall, an exchangeable jacket which is held inside of the sidewall and a heating mechanism for generating heat which radiates toward an interior of the etching chamber, the sample being disposed in the etching chamber. The apparatus includes an evacuation system which evacuates the etching chamber, an etching gas supply which supplies an etching gas into the chamber and a plasma generator which generates a plasma for performing etching of the sample in the etching chamber and at least one temperature controller for controlling a temperature of at least one such upper wall and said sidewall of said etching chamber.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A plasma etching apparatus for etching of a sample comprising: 
 an etching chamber having an upper wall and a sidewall, an exchangeable jacket which is held inside of said sidewall, and a heating mechanism for generating heat which radiates toward an interior of said etching chamber, the sample being disposed in said etching chamber;    an evacuation system which evacuates said etching chamber;    an etching gas supply which supplies an etching gas into said chamber;    a plasma generator which generates a plasma for performing etching of said sample in said etching chamber; and    at least one temperature controller for controlling a temperature of at least one such upper wall and said sidewall of said etching chamber.    
     
     
         2 . A plasma etching apparatus for etching of a sample according to  claim 1 , wherein said at least one temperature controller controls the temperature of both of said upper wall and said sidewall of said etching chamber.

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