Use of a cleaning process, a cleaning process, a connection process and a workpiece pair

Abstract

A method uses a treatment process for surfaces which subsequently are to be connected by bonding, gluing or molding. The surfaces are exposed to an atmosphere with activated hydrogen. The connection is made a process step for eliminating the conservation treatment. The surfaces can be subjected to a plasma discharge in an atmosphere containing hydrogen. The plasma discharge is operated by a cathode/anode path as a DC discharge, and using a thermionic cathode as the cathode. The workpiece to be stored in air comprises a connection, which by gluing, bonding or molding, is subjectable to substantially higher stress than an identical workpiece which is stored in an identical manner, this being determinable by essentially identical Auger diagrams.

What is claimed is:  
     
         1 . Method of using a treatment process for surfaces which subsequently are to be connected by bonding, gluing or molding, wherein the surfaces are exposed to an atmosphere with activated hydrogen, comprising the step of making the connecting without a process step for eliminating the conservation treatment.  
     
     
         2 . Method for treating surfaces which subsequently are to be connected by bonding, gluing or molding, wherein the surfaces are subjected to a plasma discharge in an atmosphere containing hydrogen, comprising the step of operating the plasma discharge by a cathode/anode path as a DC discharge, and using a thermionic cathode as the cathode.  
     
     
         3 . Method for bonding, gluing or molding surfaces, comprising the steps of first subjecting the surfaces to an atmosphere with activated hydrogen, then storing the surfaces in air, and connecting the surfaces with one another without any additional treatment.  
     
     
         4 . Method according to  claim 1 , further comprising the step of activating the atmosphere hydrogen by a plasma discharge or light, including UV radiation.  
     
     
         5 . Method according to  claim 3 , wherein the step of first subjecting includes activating the atmosphere hydrogen with a plasma discharge or light, including UV radiation.  
     
     
         6 . Method according to  claim 1 , wherein the surfaces are one of metallic, metalloid and plastic surfaces.  
     
     
         7 . Method according to  claim 2 , wherein the surfaces are one of metallic, metalloid and plastic surfaces.  
     
     
         8 . Method according to  claim 3 , wherein the surfaces are one of metallic, metalloid and plastic surfaces.  
     
     
         9 . Method according to  claim 3 , wherein the hydrogen is activated by a low-voltage discharge.  
     
     
         10 . Method according to  claim 8 , wherein the low-voltage discharge is carried out by an electron-emitting cathode.  
     
     
         11 . Method according to  claim 1 , wherein the atmosphere is a vacuum atmosphere, and the hydrogen is activated in a plasma discharge, the atmosphere further containing a working gas.  
     
     
         12 . Method according to  claim 11 , wherein the working gas is argon, and the atmosphere consists of hydrogen and the working gas.  
     
     
         13 . Method according to  claim 1 , wherein the hydrogen is activated by a plasma discharge whose discharge voltage is lower than about 30V.  
     
     
         14 . Method according to  claim 13 , wherein the discharge current of the plasma discharge is between 10 A and 100 A.  
     
     
         15 . Method according to  claim 1 , wherein the surfaces are ultrasonically welded together.  
     
     
         16 . Method according to  claim 1 , wherein the surfaces comprise the integrated circuits to be connected with a semiconductor system carrier or to be electrically bonded by wire bonding or comprises sheathable electric circuits connected with the semiconductor system carrier and bonded by wire bonding with a molding mass.  
     
     
         17 . Method according to  claim 1 , wherein the surfaces comprise flip chip integrated circuits which are to be bonded and to be positioned, and semiconductor system carriers by the melting-open of soldering points of the circuit and of the semiconductor system carrier.  
     
     
         18 . Workpiece to be stored in air, comprising a connection, which by gluing, bonding or molding, is subjectable to substantially higher stress than an identical workpiece which is stored in an identical manner, as determinable by essentially identical Auger diagrams.  
     
     
         19 . Workpiece to be stored in air, comprising an air-contaminated surface having an increased hydrogen concentration compared with another identical and identically stored workpiece, which can be determined by at least one of Fourier transform infrared spectroscopy with attenuated total reflection and elastic recoil detection.  
     
     
         20 . Workpiece to be stored in air during a defined time period, comprising a structure which is glued, soldered, welded or molded equally well at a significantly lower temperature as an identical workpiece which has been stored in air for a significantly shorter time period.  
     
     
         21 . Process for establishing a glued, soldered, welded or molded connection between surfaces of two workpieces, of which one can be heated to a maximum of 150° C., comprising the step of storing the workpieces in air before or during establishment of the connection.  
     
     
         22 . Process according to  claim 21 , wherein the surfaces are subjected to activated hydrogen prior to the storing step.  
     
     
         23 . Process for establishing a glued, soldered, welded or molded connection in workpieces stored in air, comprising the step of determining with identical auger diagrams the establishment of the connection which is subjectable to substantially higher stress than an identical workpiece stored in an identical manner.