Method for processing specimens, an apparatus therefor and a method of manufacture of a magnetic head

Abstract

A method of processing specimens, an apparatus therefor, and a method of manufacture of a magnetic head are provided wherein a complicated conventional post processing step for removing corrosion products is eliminated by a corrosion prevention processing for removing only a residual chlorine compound produced in the gas plasma etching. More specifically, the method is comprised of the steps of: forming a lamination film including a seed layer made of NiFe alloy, an upper magnetic pole made of NiFe alloy connected to the seed layer, a gap layer made of oxide film in close contact with the seed layer, and a shield layer made of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing the residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.

What is claimed is:  
     
         1 . A method of processing a specimen comprising the steps of: 
 a first step of etching a specimen of lamination film formed on a substrate using a gas plasma which contains chlorine in an etching chamber at a temperature below 200° C. of the specimen, said lamination film including at least one layer of NiFe alloy or NiFeCo alloy; and    a second step of plasma post processing for removing a residual chlorine compound deposited on a surface of said lamination film which is exposed by said first step using a gas plasma which contains H 2 O or methanol under pressure of 50 Pa or more, and at a temperature below 200° C. of the specimen.    
     
     
         2 . A method of processing a specimen according to  claim 1 , wherein said gas plasma is produced using at least one selected from the group consisting of Cl2, BC13, Ar and O2, or in combination therebetween.  
     
     
         3 . A method of processing a specimen according to  claim 1 , wherein said lamination film further includes at least one of the following, which is to be processed by gas plasma etching in said processing chamber, 
 (A) a photo resist layer,    (B) an alumina (Al2O3) layer,    (C) a silicon oxide layer,    (D) a Cu layer,    (E) a Ta layer, and    (F) a Cr layer.    
     
     
         4 . A method of processing a specimen according to  claim 1 , wherein said substrate is a sintered substrate composed of A1203 and TiC, and a layer of NiFe alloy is formed on said substrate, which is subjected to a gas plasma etching in a process chamber.  
     
     
         5 . A method of manufacture of a magnetic head having an upper magnetic pole and a lower magnetic pole disposed opposite to each other, and having a resist processing of multiple layers including said upper and lower magnetic poles, comprising the steps of: 
 forming a lamination film which includes an upper photo resist layer, a hard mask layer comprising SiO2 or alumina, a lower photo resist layer, and a seed layer which comprises a NiFe alloy or NiFeCo alloy;    etching said hard mask layer by plasma etching using said upper photo resist layer as a mask;    forming a deep groove by plasma etching said lower photo resist layer using a gas which includes chlorine and using said hard mask as a mask so as to expose said seed layer in the bottom of said deep groove;    removing a residual chlorine compound deposited on a surface of the seed layer which is exposed, by a plasma post processing using a gas plasma which contains H2O or methanol; then, embedding a NiFe alloy into said deep groove to make contact with said seed layer for providing said upper magnetic pole.    
     
     
         6 . A method of manufacture of a magnetic head having an upper magnetic pole and a lower magnetic pole disposed opposite to each other, including a method of processing a seed layer of the magnetic head, said method comprising the steps of: 
 forming a lamination film which includes: a seed layer composed of a NiFe alloy or NiFeCo alloy; an upper magnetic layer of an NiFe alloy in close contact with said seed layer; a gap layer of an oxide film in close contact with said seed layer;    and a shield layer of an NiFe alloy in close contact with said gap layer;    plasma etching said seed layer with a plasma gas which contains chlorine using the upper magnetic pole as its mask; then    removing a residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.    
     
     
         7 . A method of manufacture of a magnetic head having an upper magnetic pole and a lower magnetic pole disposed opposite to each other, including a method of forming a gap of said magnetic head, said method comprising the steps of: 
 forming a lamination film which includes: a seed layer of NiFe alloy or NiFeCo alloy; an upper magnetic pole of NiFe alloy which is connected to said seed layer; a gap layer of oxide film in close contact with the seed layer; and a shield layer of NiFe alloy in close contact with the gap layer;    etch-processing the seed layer;    etching the gap layer by plasma processing with a gas which contains chlorine gas, and using the upper magnetic pole as its mask; and after that    removing a residual chlorine compound by a plasma post treatment using a gas plasma which contains H2O or methanol.    
     
     
         8 . A method of manufacture of a magnetic head having an upper magnetic pole and a lower magnetic pole disposed opposite to each other, including a method of trimming the magnetic head, comprising the steps of: 
 forming a lamination film which includes a seed layer of NiFe alloy, and upper magnetic pole of NiFe alloy connected to said seed layer, a gap layer of oxide film in close contact with the seed layer, and a shield layer of NiFe alloy in close contact with the gap layer;    etching the seed layer;    etching the gap layer;    trim-etching the shield layer by plasma processing with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing a residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.    
     
     
         9 . A method of manufacture of a magnetic head having an upper magnetic pole and a lower magnetic pole disposed opposite to each other, comprising the steps of: 
 forming a lamination film which includes a seed layer of NiFe alloy, an upper magnetic pole of NiFe alloy connected to said seed layer, a gap layer of oxide film which is in close contact with the seed layer, and a shield layer of NiFe alloy which is in close contact with the gap layer;    subjecting said seed layer, said gap layer and said shield layer to plasma etching sequentially using said upper magnetic pole as a mask; and    removing a residual chlorine compound deposited on an exposed surface by a plasma post treatment using a gas plasma which contains H2O or methanol.    
     
     
         10 . A method of manufacture of a magnetic head according to  claim 9 , wherein said gap layer is etched with a gas plasma which contains chlorine or fluoride gas, and wherein said seed layer and said shield layer are etched with a gas plasma which contains chlorine and argon gases.  
     
     
         11 . A processing apparatus for etching a specimen which is laminated on a substrate comprising: 
 an etching process unit which is supplied with a gas and produces a plasma, for etching a lamination film which includes at least one layer of NiFe alloy or NiFeCo alloy layers formed on the substrate using a gas plasma which contains chlorine gas in an etching chamber at a temperature below 200° C. of the specimen; and    a plasma post treatment unit for removing a residual chlorine compound deposited on an exposed surface of said layer of NiFe alloy exposed due to said etching by a gas plasma which contains 1120 or methanol, under a pressure of 50 Pa or more, and at a temperature below 200° C. of the specimen.    
     
     
         12 . A processing apparatus according to  claim 9 , further comprising: 
 an atmospheric loader;    a vacuum transport chamber having a vacuum transport robot therein; and    unload and load lock chambers which connect between said atmospheric loader and said vacuum transport chamber, and through which a specimen is delivered, wherein said vacuum transport chamber is connected to an etching chamber of said etching process unit; wherein    said atmospheric loader is connected to a plasma post treatment chamber of said plasma post treatment unit.    
     
     
         13 . A processing apparatus according to  claim 11 , wherein a plurality of etching process chambers are provided.  
     
     
         14 . A processing apparatus according to claims  11  or  12 , wherein a plurality of plasma post treatment chambers are provided.