Semiconductor processing methods

Abstract

In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

1 . A semiconductor processing method comprising: 
 forming an antireflective material layer over a substrate;    annealing at least a portion of the antireflective material layer at a temperature of greater than about 400° C.;    forming a layer of photoresist over the annealed antireflective material layer;    patterning the layer of photoresist; and    removing a portion of the antireflective material layer unmasked by the patterned layer of photoresist.    
     
     
         2 . The method of  claim 1  wherein the antireflective material layer comprises a stack of layers.  
     
     
         3 . The method of  claim 1  wherein the antireflective material layer consists of one substantially homogenous layer.  
     
     
         4 . The method of  claim 1  wherein the layer of photoresist is formed against the antireflective material layer.  
     
     
         5 . A semiconductor processing method comprising: 
 forming an antireflective material layer over a substrate;    annealing the antireflective material layer at a temperature of greater than about 400° C.;    forming a layer of photoresist over the annealed antireflective material layer; and    exposing portions of the layer of photoresist to radiation waves, some of the radiation waves being attenuated by the antireflective material during the exposing.    
     
     
         6 . The method of  claim 5  wherein the attenuation comprises absorbing radiation waves with the antireflective coating.  
     
     
         7 . The method of  claim 5  wherein the layer of photoresist is formed against the antireflective material layer.  
     
     
         8 . The method of  claim 5  wherein the annealing temperature is greater than about 800° C.  
     
     
         9 . The method of  claim 5  further comprising exposing the antireflective material layer to a nitrogen-containing atmosphere during the annealing.  
     
     
         10 . The method of  claim 5  wherein the antireflective material layer comprises oxygen, nitrogen and silicon.  
     
     
         11 . The method of  claim 5  wherein the antireflective material layer comprises from about 5% to about 37% (by atomic concentration) oxygen, from about 10% to about 35% (by atomic concentration) nitrogen, from about 50% to about 65% (by atomic concentration) silicon, and hydrogen.  
     
     
         12 . The method of  claim 5  wherein the annealing temperature is from about 800° C. to about 1050° C., and wherein the antireflective material layer comprises from about 5% to about 37% (by atomic concentration) oxygen, from about 10% to about 35% (by atomic concentration) nitrogen, from about 50% to about 65% (by atomic concentration) silicon, and hydrogen.  
     
     
         13 . A semiconductor processing method comprising; 
 forming a solid antireflective material layer over a substrate;    altering optical properties of the antireflective material layer;    after altering the optical properties, forming a layer of photoresist over the antireflective material layer; and    exposing portions of the layer of photoresist to radiation waves and absorbing some of the radiation waves with the antireflective material.    
     
     
         14 . The method of  claim 13  further comprising exposing the antireflective material layer to an atmosphere during the altering, the atmosphere comprising at least one of nitrogen and argon.  
     
     
         15 . The method of  claim 13  wherein the optical properties which are altered include at least one of an “n” coefficient or a “K” coefficient.  
     
     
         16 . The method of  claim 13  wherein the altering comprises annealing the antireflective material layer at a temperature greater than about 400° C.  
     
     
         17 . The method of  claim 13  wherein the altering comprises annealing the antireflective material layer at a temperature greater than 800° C.  
     
     
         18 . The method of  claim 13  wherein the altering comprises annealing the antireflective material layer at a temperature of from about 800° C. to about 1050° C., and wherein the antireflective material layer comprises from about 5% to about 37% (by atomic concentration) oxygen, from about 10% to about 35% (by atomic concentration) nitrogen and from about 50% to about 65% (by atomic concentration) silicon.  
     
     
         19 . A semiconductor processing method comprising; 
 chemical vapor depositing an antireflective material layer onto a semiconductive material substrate at a temperature of from about 300° C. to about 400° C.;    annealing the solid antireflective material layer at a temperature of from about 800° C. to about 900° C. to alter at least one of an “n” coefficient or a “k” coefficient of the antireflective material layer;    forming a layer of photoresist over the annealed antireflective material layer;    exposing portions of the photoresist to radiation waves while leaving other portions of the photoresist unexposed and absorbing some of the radiation waves with the antireflective material; and    selectively removing either the exposed or unexposed portions of the photoresist while leaving the other of the exposed and unexposed portions over the substrate.    
     
     
         20 . The method of  claim 19  wherein the antireflective material layer comprises oxygen, nitrogen and silicon.  
     
     
         21 . The method of  claim 19  wherein the antireflective material layer comprises from about 5% to about 37% (by atomic concentration) oxygen, from about 10% to about 35% (by atomic concentration) nitrogen, from about 50% to about 65% (by atomic concentration) silicon, and hydrogen.