Beol decoupling capacitor

Abstract

An IC including a resistor which is coupled to a metal wiring level through metal contacts, said resistor including a discrete metal-insulator-metal stack, wherein said metal contacts are in contact to one of said metals of said film stack. In the above IC design, current flows laterally through either the top metal electrode, the bottom metal electrode, or both, and any unused electrode is disconnected from the circuit.

Having thus described our invention in detail, what we claims as new, and desire to secure by the Letters Patent is:  
     
         1 . An integrated circuit (IC) comprising at least a resistor which is coupled to a metal wiring level of an interconnect or damascene structure through metal contacts, said resistor including a discrete metal-insulator-metal film stack, wherein said metal contacts are in contact with one of said metals of said film stack.  
     
     
         2 . The IC of  claim 1  wherein current flows laterally through the top metal electrode of said metal-insulator-metal film stack, the bottom metal electrode of said metal-insulator-metal film stack, or both electrodes, and any unused electrode is disconnected from the circuit.  
     
     
         3 . The IC of  claim 1  wherein said insulator of said film stack is an amorphous dielectric having a dielectric constant of 10 or greater.  
     
     
         4 . The IC of  claim 3  wherein said amorphous dielectric is a thin film having a thickness of from about 25 to about 500 nm.  
     
     
         5 . The IC of  claim 3  wherein said amorphous dielectric is a perovskite-type oxide having the formula ABO 3  wherein B is at least one acidic oxide containing a metal selected from Group IVB, VB, VIB, VIIB or IB of the Periodic Table of Elements, and A is at least one additional cation having a positive formal charge of from about 1 to about 3.  
     
     
         6 . The IC of  claim 5  wherein said perovskite-type oxide is a titanate-based dielectric, a manganate-based material, a cuprate-based material, a tungsten bronze-type niobate, tantalate or titanate, or a layered bismuth-tantalate, -niobate or -titanate.  
     
     
         7 . The IC of  claim 3  wherein said amorphous dielectric is barium strontium titanate, barium titanate, lead zirconium titanate, tantalum titanate, lead lanthanum titanate, strontium titanate, barium strontium niobate, barium zirconium titanate or barium titanium niobate.  
     
     
         8 . The IC of  claim 3  wherein said amorphous dielectric is barium strontium titanate or barium zirconium titanate.  
     
     
         9 . The IC of  claim 1  wherein said insulator is SiO 2 , Si 3 N 4  or Al 2 O 3 .  
     
     
         10 . The IC of  claim 1  wherein said metals of said metal-insulator-metal film are composed of the same or different material selected from the group consisting of TaN, Pt, Ir, ruthenium oxide, Al, Au, Cu, Ta, TaSiN and combinations or multilayers thereof.  
     
     
         11 . The IC of  claim 1  wherein said metal contacts are formed above said metal-insulator-metal film stack.  
     
     
         12 . The IC of  claim 1  wherein said metal contacts are formed below said metal-insulator-metal film stack.  
     
     
         13 . The IC of  claim 1  wherein said metal contacts are composed of a conductive metallic material selected from the group consisting of Al, W, Cu, TaN, TaN/α-Ta and mixtures or alloys thereof.  
     
     
         14 . The IC of  claim 13  wherein said metal contacts selected from the group consisting of TaN and TaN/α-Ta.  
     
     
         15 . The IC of  claim 1  wherein said metal wiring level is composed of Al, W, Cu, TaN, TaN/α-Ta and mixtures or alloys thereof.  
     
     
         16 . The IC of  claim 15  wherein said metal wiring level is composed of Al, W or Cu.  
     
     
         17 . The IC of  claim 1  further comprising a capacitor formed adjacent to said resistor, said capacitor comprising the same metal-insulator-metal films as said resistor, but being electrically isolated therefrom.  
     
     
         18 . The IC of  claim 1  wherein said metal contacts and metal wiring are part of a damascene structure.  
     
     
         19 . A method for forming an integrated circuit (IC) including at least a resistor comprising the steps of: 
 (a) providing a metal-insulator-metal film stack on at least a material layer of an interconnect structure;    (b) patterning said metal-insulator-metal film stack into discrete metal-insulator-metal film stacks;    (c) forming metal contacts on at least one of said discrete metal-insulator-metal film stacks; and    (d) forming a wiring region connected to said metal contacts.    
     
     
         20 . The method of  claim 19  wherein said insulator of said film stack is an amorphous dielectric having a dielectric constant of 10 or greater.  
     
     
         21 . The method of  claim 20  wherein said amorphous dielectric is formed utilizing deposition and annealing temperatures below 450° C.  
     
     
         22 . A method for forming an integrated circuit (IC) including at least a resistor comprising the steps of: 
 (a) forming metal contacts on a surface of a metal wiring region, said metal wiring region is part of an interconnect or damascene structure; and    (b) forming a discrete metal-insulator-metal film stack on at least said metal contacts.