Pattern formation method

Abstract

A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern.

What is claimed is:  
     
         1 . A pattern formation method comprising the steps of: 
 forming a resist film by applying, on a substrate, a chemical amplified resist material that includes a base polymer, wherein said base polymer is combined with a fluorine atom; and    irradiating said resist film for pattern exposure with Xe 2  laser beam, F 2  laser beam, Kr 2  laser beam, ArKr laser beam or Ar 2  laser beam, and forming a resist pattern by developing the pattern exposed resist film.    
     
     
         2 . The pattern formation method of  claim 1 , wherein said fluorine atom is bonded to a main chain of said base polymer.  
     
     
         3 . The pattern formation method of  claim 2 , wherein said base polymer is poly (vinyl phenol), and said fluorine atom is substituted for at least one of hydrogen atoms bonded to a main chain of maid poly (vinyl phenol).  
     
     
         4 . The pattern formation method of  claim 2 , wherein said base polymer is an acrylic resin, and said fluorine atom is substituted for at least one of hydrogen atoms bonded to a main chain of said acrylic resin.  
     
     
         5 . The pattern formation method of  claim 2 , wherein said base polymer is poly (vinyl alcohol), and said fluorine atom is substituted for at last one of hydrogen atoms bonded to a main chain of said poly (vinyl alcohol).  
     
     
         6 . The pattern formation method of  claim 1 , wherein said fluorine atom is bonded to a side chain of said base polymer.  
     
     
         7 . The pattern formation method of  claim 6 , wherein said base polymer includes a benzene ring, and said fluorine atom is substituted for at least one of hydrogen atoms bonded to said benzene ring.  
     
     
         8 . The pattern formation method of  claim 7 , wherein said base polymer is poly (vinyl phenol), and said fluorine atom is substituted for at least one of hydrogen atoms bonded to a benzene ring of said poly (vinyl phenol).  
     
     
         9 . The pattern formation method of  claim 6 , wherein said base polymer is an acrylic resin, arid said fluorine atom is bonded to an ester of said acrylic resin.  
     
     
         10 . The pattern formation method of  claim 1 , wherein said fluorine atom is included in a protecting group that is eliminated by acid and constitutes said base polymer.