Method for producing a diaphragm sensor unit and diaphragm sensor unit

Abstract

In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

What is claimed is:  
     
         1 . A method for producing a diaphragm sensor unit having a semiconductor material substrate, comprising the steps of: 
 generating a planar diaphragm and an insulating well for thermal insulating below the diaphragm to form sensor element structures for at least one sensor;    doping the substrate, made of semiconductor material, in a predefined region that defines sensor element structures, the doping being deliberately different from a surrounding semiconductor material;    generating porous semiconductor material from semiconductor material between the regions receiving the doping; and    at least one of removing and rendering porous semiconductor material in a region of the well below the semiconductor material rendered porous and parts of the sensor element structure.    
     
     
         2 . The method according to  claim 1 , further comprising the step of oxidizing the semiconductor material that was rendered porous after generating the insulating well.  
     
     
         3 . The method according to  claim 1 , further comprising the step of providing the doped regions with a protective layer before generating porous semiconductor material.  
     
     
         4 . The method according to  claim 1 , wherein the well region is removed by etching entirely through the porous sections of the diaphragm.  
     
     
         5 . The method according to  claim 1 , wherein the well region is rendered porous and oxidized entirely through the porous sections of the diaphragm.  
     
     
         6 . The method according to  claim 1 , further comprising the steps: 
 of depositing a material layer on the semiconductor regions receiving the doping, within the semiconductor material rendered porous and oxidized, which form the sensor element structures; and    structuring the deposited material layer to thereby generate a-thermocouple element.    
     
     
         7 . A diaphragm sensor unit, comprising: 
 a substrate made of a semiconductor material;    a planar diaphragm configured to form sensor element structures for at least one sensor; and    an insulating well positioned below the diaphragm and configured to thermally insulate the diaphragm;    wherein the diaphragm include semiconductor material sections made of at least one of porous and oxidized semiconductor material.    
     
     
         8 . The diaphragm sensor unit according to  claim 7 , further comprising non-porous semiconductor regions positioned in the diaphragm and configured to form printed circuit traces.  
     
     
         9 . The diaphragm sensor unit according to  claim 7 , wherein the insulating well includes a cavity.  
     
     
         10 . The diaphragm sensor unit according to  claim 7 , wherein a well region includes highly porous semiconductor material.  
     
     
         11 . A diaphragm sensor array, comprising: 
 a plurality of diaphragm sensor units, each diaphragm sensor unit including: 
 a substrate made of a semiconductor material;  
 a planar diaphragm configured to form sensor element structures for at least one sensor; and  
 an insulating well positioned below the diaphragm and configured to thermally insulate the diaphragm;  
   wherein the diaphragm include semiconductor material sections made of at least one of porous and oxidized semiconductor material.    
     
     
         12 . The diaphragm sensor array according to  claim 11 , wherein each diaphragm sensor unit further includes non-porous semiconductor regions positioned in the diaphragm and configured to form printed circuit traces.  
     
     
         13 . The diaphragm sensor array according to  claim 11 , wherein the insulating well includes a cavity.  
     
     
         14 . The diaphragm sensor array according to  claim 11 , wherein a well region includes highly porous semiconductor material.