Plasma thin-film deposition method

Abstract

In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of W (tungsten) is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, F gases are desorbed from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. As thin-film deposition gases, cyclic C 5 F 8 gas and a hydrocarbon gas, e.g., C 2 H 4 gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof. Alternatively, cyclic C 6 F 6 gas is used as a thin-film deposition gas, and activated as plasma under a pressure of, e.g., 0.06 Pa, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof.

1 . A plasma thin-film deposition method comprising the steps of: 
 activating a thin-film deposition gas containing cyclic C 5 F 8  gas to form a plasma; and    depositing an insulator film of a fluorine containing carbon film on a substrate to be treated, with said plasma.    
     
     
         2 . A plasma thin-film deposition method as set forth in  claim 1 , wherein said thin-film deposition gas contains cyclic C 5 F 8  gas and at lease one of a hydrocarbon gas and hydrogen.  
     
     
         3 . A plasma thin-film deposition method as set forth in  claim 1 , wherein said insulator film is deposited under a process pressure of 5.5 Pa or lower.  
     
     
         4 . A plasma thin-film deposition method as set forth in  claim 1 , wherein the temperature of said substrate to be treated is 360° C. or higher.  
     
     
         5 . A plasma thin-film deposition method comprising the steps of: 
 activating a thin-film deposition gas containing linear C 5 F 8  gas to form a plasma; and    depositing an insulator film of a fluorine containing carbon film on a substrate to be treated, with said plasma.    
     
     
         6 . A plasma thin-film deposition method as set forth in  claim 5 , wherein said thin-film deposition gas contains linear C 5 F 8  gas and at lease one of a hydrocarbon gas and hydrogen.  
     
     
         7 . A plasma thin-film deposition method as set forth in  claim 5 , wherein said insulator film is deposited under a process pressure of 0.3 Pa or lower.  
     
     
         8 . A plasma thin-film deposition method as set forth in  claim 5 , wherein the temperature of said substrate to be treated is 360° C. or higher.  
     
     
         9 . A plasma thin-film deposition method comprising the steps of: 
 activating a thin-film deposition gas containing a gas of a benzene ring containing compound to form a plasma; and    depositing an insulator film of a fluorine containing carbon film on a substrate to be treated, with said plasma.    
     
     
         10 . A plasma thin-film deposition method as set forth in  claim 9 , wherein said benzene ring containing compound is a compound of C and F.  
     
     
         11 . A plasma thin-film deposition method as set forth in  claim 10 , wherein said compound of C and F is C 6 F 6 .  
     
     
         12 . A plasma thin-film deposition method as set forth in  claim 10 , wherein said compound of C and F is C 7 F 8 .  
     
     
         13 . A plasma thin-film deposition method as set forth in  claim 9 , wherein said benzene ring containing compound is a compound of C, F and H.  
     
     
         14 . A plasma thin-film deposition method as set forth in  claim 13 , wherein said compound of C, F and H is C 7 H 5 F 3 .