US2003153134A1PendingUtilityA1

Semiconductor device, and a method of producing semiconductor device

38
Priority: Jun 1, 1998Filed: Feb 27, 2003Published: Aug 14, 2003
Est. expiryJun 1, 2018(expired)· nominal 20-yr term from priority
H10W 90/756H10W 90/736H10W 74/00H10W 72/9445H10W 72/07533H10W 72/07532H10W 72/5522H10W 72/5473H10W 72/5363H10W 72/952H10W 72/932H10W 72/865H10W 72/536H10W 72/075H10W 72/073H10W 72/59H10W 90/811H10W 70/442H10W 70/415H10W 74/016
38
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Claims

Abstract

A method for manufacturing a semiconductor device including providing first and second semiconductor chips each having a main surface having a semiconductor element and a plurality of external terminals, and a lower surface respectively opposing the main surface. A first lead frame is provided which has a frame body which supports outer portions and inner portions extending from the outer portions, and a second lead frame is provided which has a frame body which supports outer portions and inner portions extending from the outer portions. After electrically connecting the external terminals to the inner portions of the lead frames and resin-sealing the first and second semiconductor chips so that the first and second lead frames are superimposed, the frame body of the second lead frame is removed and a first processing fluid is applied to the outer portions of the first lead frame and the second lead frame.

Claims

exact text as granted — not AI-modified
What is claimed:  
     
         1 . A method of manufacturing a semiconductor device comprising the steps of: 
 providing first and second semiconductor chips each having a main surface comprising a semiconductor element and a plurality of external terminals, and a lower surface respectively opposing the main surface,    providing a first lead frame comprising a frame body which supports outer portions and inner portions extending from the outer portions, and a second lead frame comprising a frame body which supports outer portions and inner portions extending from the outer portions,    electrically connecting the plurality of external terminals of the first semiconductor chip to the inner portions of the first lead frame;    electrically connecting the plurality of external terminals of the second semiconductor chip to the inner portions of the second lead frame,    resin-sealing the first semiconductor chip and the second semiconductor chip so that the first lead frame and the second lead frame are superimposed,    removing the frame body of the second lead frame,    after the step of removing the frame body of the second lead frame, applying a first processing fluid to the outer portions of the first lead frame and the second lead frame, and    after the step of the first applying processing fluid, removing the frame body of the first lead frame.    
     
     
         2 . A method of manufacturing a semiconductor device according to  claim 1 , further comprising a step of applying a second processing fluid to the outer portions of the first lead frame and the second lead frame after the step of applying the first processing fluid.  
     
     
         3 . A method of manufacturing a semiconductor device according to  claim 2 , in the step of applying the first processing fluid, plating the outer portions of the first lead frame and the second lead frame.  
     
     
         4 . A method of manufacturing a semiconductor device according to  claim 3 , wherein the second processing fluid is alkaline processing fluid.  
     
     
         5 . A method of manufacturing a semiconductor device according to  claim 2 , in the step of applying the second processing fluid, plating the outer portions of the first lead frame and the second lead frame.  
     
     
         6 . A method of manufacturing a semiconductor device according to  claim 5 , in the step of applying the first processing fluid, etching surfaces of the outer portions of the first lead frame and the second lead frame.

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